| 制造商 | 部件名 | 数据表 | 功能描述 |
 Integrated Silicon Solu... |
IS61C256
|
319Kb / 6P |
WRITE CYCLE SWITCHING CHARACTERISTICS
|
 Motorola, Inc |
MCM67B618B
|
120Kb / 11P |
64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write
|
 Cypress Semiconductor |
CY7C1325G
|
805Kb / 21P |
4-Mbit (256 K x 18) Flow through Sync SRAM Synchronous self timed write
|
 ON Semiconductor |
CAT93C66
|
175Kb / 16P |
4 kb Microwire Serial CMOS EEPROM Self?뭪imed Write Cycle with Auto?뭖lear
April, 2012 ??Rev. 11 |
 ATMEL Corporation |
AT28C16
|
179Kb / 12P |
Self-Timed Byte Write Cycle
|
|
AT28C17
|
201Kb / 12P |
Self-Timed Byte Write Cycle
|
 Integrated Silicon Solu... |
IS61LPS51236B
|
1Mb / 33P |
Internal self-timed write cycle
|
 Micross Components |
AS5SS256K36
|
798Kb / 17P |
Internally self-timed WRITE cycle
|
 Megawin Technology Co.,... |
MG64F225
|
1Mb / 68P |
Flash write/erase cycle
|
|
MG64F237
|
1Mb / 68P |
Flash write/erase cycle
|