HAT2210R_17 pdf, HAT2210R_17 功能描述, HAT2210R_17 数据表, HAT2210R

部件名	HAT2210R

功能描述	Silicon N Channel Power MOSFET with Schottky Barrier Diode

文件大小	178.79 Kbytes

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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类似零件编号 - HAT2210R_17

制造商	部件名	数据表	功能描述
Renesas Technology Corp	HAT2210R-EL-E	116Kb / 12P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	HAT2210RJ	116Kb / 12P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	HAT2210RJ-EL-E	116Kb / 12P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

制造商	部件名	数据表	功能描述
NEC	UPA2780GR	64Kb / 6P	SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE
	UPA2781GR	63Kb / 6P	SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE
	UPA2782GR	69Kb / 6P	SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE
Sanyo Semicon Device	SCH2807	50Kb / 6P	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
Renesas Technology Corp	RJK03A4DPA	248Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
	RJK03E4DPA	111Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
	RJK0226DNS	171Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
	RJK03L2DNS	127Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode
	RJK03L3DNS	130Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode
	RJK0240DNS	228Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching Apr 06, 2012