| 制造商 | 部件名 | 数据表 | 功能描述 |
International Rectifier |
IRHG6110
|
195Kb / 14P |
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
|
Anachip Corp |
AF9903M
|
799Kb / 8P |
2N and 2P-Channel Enhancement Mode Power MOSFET
Rev. 1.0 Sep 22, 2005 |
International Rectifier |
IRHQ567110
|
199Kb / 14P |
RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)
|
Advanced Power Electron... |
AP9930M
|
102Kb / 7P |
2N AND 2P-CHANNEL ENHANCEMENT
|
International Rectifier |
IRHG567110
|
182Kb / 14P |
RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
|
Advanced Power Electron... |
AP9930GM
|
95Kb / 7P |
2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP9934GM
|
96Kb / 7P |
2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
International Rectifier |
IRFG5210
|
191Kb / 12P |
200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
|
Silicon Standard Corp. |
SSM9934GM
|
263Kb / 8P |
2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
Cystech Electonics Corp... |
MTC9930Q8
|
483Kb / 12P |
2N- and 2P-Channel Enhancement Mode MOSFET
|
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