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128564 销售商 |
| 销售商 | 部件名 | 制造商 | 功能描述 | Price | Qty. BuyNow | |
 Newark | 128564 | Brady Worldwide Inc | B302 7X10 Blk/Yel Caution High Noise/ Si; |Brady 128564 RoHS : Not Compliant |
| 0 | |
 Onlinecomponents.com | 128564 | Brady Worldwide Inc | B302 7X10 BLK/YEL CAUTION RoHS : Compliant |
| 0 | |
 Sager | IELHK111-28564-1-V | Sensata Circuit Breakers | Circuit Breakers | 0 | ||
| IELHK111-28564-2-V | Sensata Circuit Breakers | Circuit Breakers | 0 | |||
 TME | 1285641 | Phoenix Contact | EMobility: cable; 1x0.5mm2,5x1.5mm2; 400VAC; 16.63kW; IP54; 5m; 20A RoHS : Compliant |
| 0 | |
 PUI | 12.85640 | 45,978 | ||||
| 12.85641 | 3,010 | |||||
| 12.85648 | 3,000 | |||||
| 12.85649 | 1,000 | |||||
| 12.85644 | 30 | |||||
 Chip 1 Exchange | 12.8564 | Geyer Electronic E K | INSTOCK | 45,978 | ||
| 12.85641 | Geyer Electronic E K | INSTOCK | 3,010 | |||
| 12.85648 | Geyer Electronic E K | INSTOCK | 3,000 | |||
| 12.85649 | Geyer Electronic E K | INSTOCK | 1,000 | |||
| 12.85644 | Geyer Electronic E K | INSTOCK | 30 | |||
 Avnet Abacus | MAL212856478E3 | Vishay Intertechnologies | Electrolytic Capacitor 47 uF 25 V 20 Radial Leaded 20000 hours 125C Polar (Alt: MAL212856478E3) RoHS : Compliant | 0 | ||
 Vyrian | MT28C128564W18EBW-F705P706KBBWT | Micron Technology Inc | Memory Circuit, 4MX16, CMOS, PBGA77 RoHS : Unknown | 7,127 | ||
| MT28C128564W30DFW-F706P70KTTWT | Micron Technology Inc | Memory Circuit, 4MX16, CMOS, PBGA77 | 6,919 | |||
| MT28C128564W18DBW-F705P70BTWT | Micron Technology Inc | Memory Circuit, 4MX16, CMOS, PBGA77 | 6,109 | |||
| MT28C128564W30DFW-F706P85KBTWT | Micron Technology Inc | Memory Circuit, 4MX16, CMOS, PBGA77 | 6,053 | |||
| MT28C128564W18DFW-F70P70KBTWT | Micron Technology Inc | Memory Circuit, 4MX16, CMOS, PBGA77 | 5,714 | |||
| MT28C128564W18EFW-F606P856BBWT | Micron Technology Inc | Memory Circuit, 4MX16, CMOS, PBGA77 RoHS : Unknown | 5,608 | |||
| MT28C128564W30DFW-F70P70BTWT | Micron Technology Inc | Memory Circuit, 4MX16, CMOS, PBGA77 | 5,517 | |||
| MT28C128564W30DBW-F705P70KBBWT | Micron Technology Inc | Memory Circuit, 4MX16, CMOS, PBGA77 | 5,376 | |||
| MT28C128564W18DFW-F705P70BBWT | Micron Technology Inc | Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA77 RoHS : Not Compliant | 4,754 | |||
| MT28C128564W18EBW-F705P856TTWT | Micron Technology Inc | Memory Circuit, 4MX16, CMOS, PBGA77 RoHS : Unknown | 4,737 | |||
| MT28C128564W18EFW-F606P856KTBWT | Micron Technology Inc | Memory Circuit, 4MX16, CMOS, PBGA77 | 4,182 | |||
| MT28C128564W18EFW-F606P706TTWT | Micron Technology Inc | Memory Circuit, 4MX16, CMOS, PBGA77 | 3,940 | |||
| MT28C128564W18DBW-F606P85BBWT | Micron Technology Inc | Memory Circuit, 4MX16, CMOS, PBGA77 | 3,749 | |||
| MT28C128564W18DBW-F706P70BBWT | Micron Technology Inc | Memory Circuit, 4MX16, CMOS, PBGA77 | 3,391 | |||
| MT28C128564W18EFW-F605P856BTWT | Micron Technology Inc | Memory Circuit, 4MX16, CMOS, PBGA77 | 3,171 |
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