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7E3-R 销售商 |
| 销售商 | 部件名 | 制造商 | 功能描述 | Price | Qty. BuyNow | |
![]() DigiKey | BUK7E3R1-40E,127 | Rochester Electronics LLC | NEXPERIA BUK7E3R1-40E - 100A, 40 |
| 1,263 | |
| VAMV06077E-3R3MM2 | Delta Electronics Inc | FIXED IND 3.3UH 5.1A 19.2 MOHM |
| 1,159 | ||
| VAMV06077E-3R3MM2 | Delta Electronics Inc | FIXED IND 3.3UH 5.1A 19.2 MOHM |
| 1,159 | ||
| VAMV06077E-3R3MM2 | Delta Electronics Inc | FIXED IND 3.3UH 5.1A 19.2 MOHM |
| 1,159 | ||
BUK7E3R5-60E,127![]() | Nexperia | MOSFET N-CH 60V 120A I2PAK RoHS : Compliant | 0 | |||
BUK7E3R1-40E,127![]() | Nexperia | MOSFET N-CH 40V 100A I2PAK RoHS : Compliant |
| 0 | ||
| D55342E07B37E3RTS | Vishay Thin Film | D55342E 25PPM 1206 37.3K 1% R TS |
| 0 | ||
| M55342E08B67E3RWS | Vishay Thin Film | M55342E 25PPM 2010 67.3K 1% R WS |
| 0 | ||
![]() Mouser Electronics | VAMV06077E-3R3MM2 | Cyntec Co Ltd | Power Inductors - SMD IND SMD 3.3UH 7.1mm * 7.8mm * 7.5mm RoHS : Compliant |
| 547 | |
![]() Rochester Electronics | BUK7E3R1-40E,127![]() | NXP Semiconductors | Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant |
| 1,263 | |
BUK7E3R5-60E,127![]() | NXP Semiconductors | Power Field-Effect Transistor, 120A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant |
| 0 | ||
BUK7E3R1-40E,127![]() | Nexperia | Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant |
| 6,221 | ||
BUK7E3R5-60E,127![]() | Nexperia | Power Field-Effect Transistor, 120A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant |
| 0 | ||
![]() TME | BUK7E3R5-60E,127![]() | Nexperia | Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W RoHS : Compliant |
| 0 | |
![]() Master Electronics | VAMV06077E-3R3MM2-79 | Delta Thermal Inc | VAMV06077E-3R3MM2-79 RoHS : Compliant |
| 0 | |
![]() Vyrian | BUK7E3R5-60E,127![]() | Nexperia | Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant | 8,420 | ||
BUK7E3R1-40E,127![]() | Nexperia | Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant | 3,410 | |||
| BUK7E3R1-40E | Nexperia | Power Field-Effect Transistor, 100A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant | 2,919 | |||
| BUK7E3R5-60E | NXP Semiconductors | Power Field-Effect Transistor, 120A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant | 809 |
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