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F2SP-B-R/Q 销售商 |
| 销售商 | 部件名 | 制造商 | 功能描述 | Price | Qty. BuyNow | |
![]() Braemac Americas-Symmetry | PCFL-180P-F2S | Nipron Co | 180W fanless ATX power supply |
| 1 | |
| BE890F2S110TMI1000 | Telit | BLE 4.2 FULL SENSORS / BLUEMOD+S42M/AI3ATH |
| 0 | ||
![]() EBV Elektronik | DF2S6.8FS,L3M(T | Toshiba America Electronic Components | ESD Suppressor Zener Single UniDir 30kV 2Pin SOD923 (Alt: DF2S6.8FS,L3M(T) RoHS : Compliant | 20,000 | ||
| DF2S5M4FS,L3M(T | Toshiba America Electronic Components | ESD Suppressor TVS Single UniDir 30kV 2Pin SOD923 (Alt: DF2S5M4FS,L3M(T) RoHS : Compliant | 20,000 | |||
| DF2S6.2FS,L3M(T | Toshiba America Electronic Components | ESD PROTECTION DIODE (Alt: DF2S6.2FS,L3M(T) RoHS : Compliant | 10,000 | |||
| IPD040N08NF2SATMA1 | Infineon Technologies AG | Transistor MOSFET NChannel 80V 129A 3Pin TO252 TR (Alt: SP005737450) RoHS : Compliant | 4,000 | |||
| IPD038N06NF2SATMA1 | Infineon Technologies AG | Power MOSFET N Channel 60 V 120 A 385 Milliohms TO252 DPAK 3 Pins Surface Mount (Alt: SP005588983) RoHS : Compliant | 4,000 | |||
| IPA030N10NF2SXKSA1 | Infineon Technologies AG | (Alt: SP005538815) RoHS : Compliant | 3,500 | |||
| IPD028N06NF2SATMA1 | Infineon Technologies AG | Power MOSFET N Channel 60 V 139 A 285 Milliohms TO252 DPAK 3 Pins Surface Mount (Alt: SP005588978) RoHS : Compliant | 2,000 | |||
| IPT017N10NF2SATMA1 | Infineon Technologies AG | Power MOSFET N Channel 100 V 294 A 00016 ohm HSOF Surface Mount (Alt: SP005612527) RoHS : Compliant | 1,800 | |||
| IPB016N08NF2SATMA1 | Infineon Technologies AG | Transistor MOSFET NCH 80V 260A 7Pin TO263 TR (Alt: SP005571685) RoHS : Compliant | 1,600 | |||
| IPF012N06NF2SATMA1 | Infineon Technologies AG | Power MOSFET N Channel 60 V 282 A 12 Milliohms TO263 7 Pins Surface Mount (Alt: SP005588970) RoHS : Compliant | 1,600 | |||
| IPF010N06NF2SATMA1 | Infineon Technologies AG | Power MOSFET N Channel 60 V 293 A 105 Milliohms TO263 7 Pins Surface Mount (Alt: SP005588966) RoHS : Compliant | 800 | |||
| NXH200T120H3Q2F2STNG | onsemi | IGBT Module Three level Inverter 330 A 12 kV 679 W 175 C Q2PACK (Alt: NXH200T120H3Q2F2STNG) RoHS : Compliant | 396 | |||
| NXH450B100H4Q2F2SG | onsemi | SiSiC Hybrid Modules 3 Channel Symmetric Boost 1000 V 150 A IGBT 1200 V 30 A SiC Diode Solder pins (Alt: NXH450B100H4Q2F2SG) RoHS : Compliant | 216 | |||
| IPB035N10NF2SATMA1 | Infineon Technologies AG | (Alt: SP006048541) RoHS : Compliant | 0 | |||
| NXH350N100H4Q2F2S1G | onsemi | (Alt: NXH350N100H4Q2F2S1G) RoHS : Compliant | 0 | |||
![]() Flip Electronics | NGTD8R65F2SWK | onsemi | Stock, Ship Today RoHS : Compliant |
| 17,557 | |
| NXH300B100H4Q2F2S1G | onsemi | Stock, Ship Today |
| 2,448 | ||
| CNY17F2SVM | onsemi | Stock, Ship Today RoHS : Compliant |
| 2,000 | ||
| CNY17F2SM | onsemi | Stock, Ship Today RoHS : Compliant |
| 995 | ||
| NXH400N100L4Q2F2SG | onsemi | Stock, Ship Today RoHS : Compliant |
| 36 | ||
| NXH400N100H4Q2F2SG | onsemi | Stock, Ship Today RoHS : Compliant | 36 | |||
| NXH450N65L4Q2F2S1G-01 | onsemi | Stock, Ship Today |
| 36 | ||
| NXH200B100H4F2SG | onsemi | Stock, Ship Today | 20 | |||
| NXH450B100H4Q2F2SG | onsemi | Stock, Ship Today RoHS : Compliant |
| 12 | ||
![]() Master Electronics | TF2SA-L-9V | Panasonic Electronic Components | RoHS : Compliant |
| 317 | |
| KJAM0T11F2SA | ITT Interconnect Solutions | RoHS : Compliant |
| 0 | ||
| RF2S-1A1B-D48 | IDEC Corporation | RoHS : Compliant |
| 0 | ||
| KJAM0T11F2SN | ITT Interconnect Solutions | RoHS : Compliant |
| 0 | ||
| MF2-S-34-420-1-HC6-2-B | Carling Technologies | MF2S344201HC62B RoHS : Compliant |
| 0 | ||
| KJAM7T11F2SN | ITT Interconnect Solutions | RoHS : Compliant |
| 0 | ||
| MF2-S-32-430-2-BB2-B-C | Carling Technologies | MF2S324302BB2BC RoHS : Compliant |
| 0 | ||
| MF2-S-34-450-1-FA3-7-C | Carling Technologies | MF2S344501FA37C RoHS : Compliant |
| 0 | ||
| KJAM0T11F2SD | ITT Interconnect Solutions | RoHS : Compliant |
| 0 | ||
| MF2-S-34-450-1-JC2-7-C | Carling Technologies | MF2S344501JC27C RoHS : Compliant |
| 0 | ||
| MF2-S-34-620-1-BB6-2-B | Carling Technologies | MF2S346201BB62B RoHS : Compliant |
| 0 | ||
| RF2S-1A1BD1-D24 | IDEC Corporation | RoHS : Compliant |
| 0 | ||
| HC-M-08-MBIT-CT-F-2-SH | Phoenix Contact | HC-M-08-MBIT-CT-F-2-SH RoHS : Compliant |
| 0 | ||
| HW4F-2S-PI-USA | IDEC Corporation | RoHS : Compliant |
| 0 | ||
| MF2-S-32-625-1-HC3-B-C | Carling Technologies | MF2S326251HC3BC RoHS : Compliant |
| 0 | ||
![]() Vyrian | RJF2SA1B | Amphenol Corporation | Rectangular Connector Adapter, 8 Contacts(Side1), 8 Contacts(Side2), Female-Female RoHS : Compliant | 13,850 | ||
| NXH800A100L4Q2F2S2G | onsemi | Insulated Gate Bipolar Transistor, 309A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 12,917 | |||
| NXH400N100H4Q2F2SG-R | onsemi | Insulated Gate Bipolar Transistor, 409A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 12,207 | |||
| NXH160T120L2Q2F2SG | onsemi | Insulated Gate Bipolar Transistor, 181A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 12,156 | |||
| NGTD14T65F2SWK | onsemi | Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel RoHS : Compliant | 11,685 | |||
| NXH160T120L2Q2F2S1G | onsemi | Insulated Gate Bipolar Transistor, 181A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 11,418 | |||
| NGTD23T120F2SWK | onsemi | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel RoHS : Compliant | 9,360 | |||
| NGTD20T120F2SWK | onsemi | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,295 | |||
| NXH200T120H3Q2F2SG | onsemi | Insulated Gate Bipolar Transistor, 256A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 7,448 | |||
| NXH300B100H4Q2F2SG-R | onsemi | Insulated Gate Bipolar Transistor, 73A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 6,967 | |||
| NXH350N100H4Q2F2S1G | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 6,565 | |||
| NXH600B100H4Q2F2SG | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 5,533 | |||
| NGTD17R120F2SWK | onsemi | Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon RoHS : Compliant | 4,993 | |||
| SNXH600B100H4Q2F2S1G-S | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 4,184 | |||
| NXH400N100L4Q2F2SG | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 3,215 | |||
![]() Win Source Electronics | WCM2012F2SF-221T03 | Tai-Tech Advanced Electronics Co Ltd | 2 Line Common Mode Choke Surface Mount 220 Ohms @ 100 MHz 300mA DCR 400mOhm RoHS : Compliant |
| 500,000 | |
| DF2S6.8FS | Toshiba America Electronic Components | Product for Use Only as Protection against Electrostatic Discharge (ESD). RoHS : Compliant |
| 380,000 | ||
| DF2S6.8UFS | Toshiba America Electronic Components | ESD Protection Diodes Silicon Epitaxial Planar RoHS : Compliant |
| 150,000 | ||
| DF2S6.8UFS(TPL3) | Toshiba America Electronic Components | Diode 5V 2-Pin fSC T/R |
| 135,050 | ||
| IPP082N10NF2S | Infineon Technologies AG | N-Channel 100V 77A 100W Through Hole TO-220-3 RoHS : Compliant |
| 30,201 | ||
| IPP082N10NF2SAKMA1 | Infineon Technologies AG | TRENCH >=100V / N-Channel 100 V 15A (Ta), 77A (Tc) 3.8W (Ta), 100W (Tc) Through Hole PG-TO220-3 RoHS : Compliant |
| 28,370 | ||
| IPP050N10NF2SAKMA1 | Infineon Technologies AG | TRENCH >=100V / N-Channel 100 V 19.4A (Ta), 110A (Tc) 3.8W (Ta), 150W (Tc) Through Hole PG-TO220-3 RoHS : Compliant |
| 24,320 |
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