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F475R0 销售商 |
| 销售商 | 部件名 | 制造商 | 功能描述 | Price | Qty. BuyNow | |
![]() DigiKey | F475R07W2H3B11BPSA1 | Infineon Technologies AG | LOW POWER EASY |
| 15 | |
| F475R06W1E3BOMA1 | Infineon Technologies AG | IGBT MOD 600V 100A 275W MOD RoHS : Compliant | 0 | |||
| RTO050F475R0FTE1 | Vishay Sfernice | SFERNICE FIXED RESISTORS |
| 0 | ||
| F475R07W2H3B51BOMA1 | Infineon Technologies AG | BRIDGE RECT 1PHASE 650V 37.5A | 0 | |||
| F475R07W2H3B51BPSA1 | Infineon Technologies AG | IGBT MODULE 650V 75A 250W MODULE RoHS : Compliant | 0 | |||
| F475R07W1H3B11ABOMA1 | Infineon Technologies AG | IGBT MOD 650V 37.5A 275W MOD RoHS : Compliant | 0 | |||
![]() Avnet Americas | F475R06W1E3BOMA1 | Infineon Technologies AG | Transistor IGBT Module N-CH 600V 100A ?20V Screw Tray - Trays (Alt: F475R06W1E3BOMA1) RoHS : Compliant | 0 | ||
| F475R07W2H3B11BPSA1 | Infineon Technologies AG | - Trays (Alt: F475R07W2H3B11BPSA1) RoHS : Compliant |
| 0 | ||
| F475R07W1H3B11ABOMA1 | Infineon Technologies AG | Trans IGBT Module N-CH 650V 37.5A 15-pin EASY1B-3 - Trays (Alt: F475R07W1H3B11ABOMA1) RoHS : Compliant | 0 | |||
| RTO050F475R0FTE1 | Vishay Intertechnologies | Resistor, 475 Ohm, ? 1%, 50 W, TO-220, Thick Film, High Power - Rail/Tube (Alt: RTO050F475R0FTE1) RoHS : Not Compliant |
| 0 | ||
![]() Mouser Electronics | F475R07W2H3B11BPSA1 | Infineon Technologies AG | IGBT Modules 650 V, 75 A 3-level IGBT module RoHS : Compliant |
| 0 | |
![]() Rochester Electronics | F475R06W1E3BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel RoHS : Compliant |
| 4 | |
| F475R07W1H3B11ABOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 75A I(C), 650V V(BR)CES, N-Channel RoHS : Compliant |
| 5 | ||
| F475R07W2H3B11BPSA1 | Infineon Technologies AG | F475R07W2H - EASY STANDARD RoHS : Compliant |
| 2 | ||
![]() TME | F475R06W1E3BOMA1 | Infineon Technologies AG | Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A RoHS : Compliant |
| 0 | |
| RTO050F475R0FTE1 | Vishay Intertechnologies | Resistor: thick film; 475Ω; THT; TO220; 50W; ±1%; 500V; -55÷155°C RoHS : Compliant |
| 0 | ||
![]() Avnet Abacus | RTO050F475R0FTE1 | Vishay Intertechnologies | Resistor 475 Ohm 1 50 W TO220 Thick Film High Power (Alt: RTO050F475R0FTE1) RoHS : Compliant | 0 | ||
![]() EBV Elektronik | F4-75R07W2H3_B11 | Infineon Technologies AG | LOW POWER EASY (Alt: SP005402486) RoHS : Compliant | 0 | ||
| F475R07W2H3B51BPSA1 | Infineon Technologies AG | LOW POWER EASY (Alt: SP001602682) RoHS : Compliant | 0 | |||
| F475R07W1H3B11ABOMA1 | Infineon Technologies AG | Trans IGBT Module NCH 650V 375A 15pin EASY1B3 (Alt: SP001050464) RoHS : Compliant | 0 | |||
![]() Vyrian | F475R07W2H3B51BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 75A I(C), 650V V(BR)CES, N-Channel | 8,641 | ||
| F475R07W2H3B51BPSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 75A I(C), 650V V(BR)CES, N-Channel RoHS : Compliant | 5,977 | |||
| F475R06W1E3BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel RoHS : Compliant | 4,333 | |||
| F475R07W1H3B11ABOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 75A I(C), 650V V(BR)CES, N-Channel RoHS : Compliant | 3,914 | |||
| F4-75R06W1E3 | Eupec & Kg | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel | 274 |
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