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G-65-R 销售商 |
| 销售商 | 部件名 | 制造商 | 功能描述 | Price | Qty. BuyNow | |
![]() DigiKey | GSFG65R900 | Suzhou Good-Ark Electronics Co Ltd | MOSFET, N-CH, SINGLE, 5.00A, 650 RoHS : Compliant |
| 1,600 | |
| IMBG65R009M1HXTMA1 | Infineon Technologies AG | SILICON CARBIDE MOSFET |
| 992 | ||
| IMBG65R009M1HXTMA1 | Infineon Technologies AG | SILICON CARBIDE MOSFET |
| 992 | ||
| IMBG65R009M1HXTMA1 | Infineon Technologies AG | SILICON CARBIDE MOSFET |
| 992 | ||
| IMBG65R010M2HXTMA1 | Infineon Technologies AG | SILICON CARBIDE MOSFET |
| 866 | ||
| IMBG65R010M2HXTMA1 | Infineon Technologies AG | SILICON CARBIDE MOSFET |
| 866 | ||
| IMBG65R010M2HXTMA1 | Infineon Technologies AG | SILICON CARBIDE MOSFET |
| 866 | ||
| IMBG65R060M2H | Infineon Technologies AG | IMBG65R060M2H |
| 380 | ||
| IMBG65R060M2H | Infineon Technologies AG | IMBG65R060M2H | 380 | |||
| RE70G65R0C02 | Vishay Dale | RH-25 65 1% RE70G65R0 C02 |
| 83 | ||
| IMBG65R163M1HXTMA1 | Infineon Technologies AG | SILICON CARBIDE MOSFET PG-TO263- RoHS : Compliant |
| 33 | ||
| IMBG65R163M1HXTMA1 | Infineon Technologies AG | SILICON CARBIDE MOSFET PG-TO263- RoHS : Compliant |
| 33 | ||
| IMBG65R163M1HXTMA1 | Infineon Technologies AG | SILICON CARBIDE MOSFET PG-TO263- RoHS : Compliant |
| 33 | ||
| IMBG65R010M2H | Infineon Technologies AG | IMBG65R010M2H |
| 28 | ||
| IMBG65R010M2H | Infineon Technologies AG | IMBG65R010M2H |
| 28 | ||
![]() Mouser Electronics | IMBG65R007M2HXTMA1 | Infineon Technologies AG | SiC MOSFETs SILICON CARBIDE MOSFET RoHS : Compliant |
| 1,242 | |
| IMBG65R015M2HXTMA1 | Infineon Technologies AG | SiC MOSFETs SILICON CARBIDE MOSFET RoHS : Compliant |
| 1,112 | ||
| IMBG65R050M2HXTMA1 | Infineon Technologies AG | SiC MOSFETs SILICON CARBIDE MOSFET RoHS : Compliant |
| 1,020 | ||
| IMBG65R026M2HXTMA1 | Infineon Technologies AG | SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? RoHS : Compliant |
| 938 | ||
| IMBG65R072M1HXTMA1 | Infineon Technologies AG | SiC MOSFETs SILICON CARBIDE MOSFET RoHS : Compliant |
| 861 | ||
| IMBG65R075M2HXTMA1 | Infineon Technologies AG | SiC MOSFETs SILICON CARBIDE MOSFET RoHS : Compliant |
| 798 | ||
| IMBG65R107M1HXTMA1 | Infineon Technologies AG | SiC MOSFETs SILICON CARBIDE MOSFET RoHS : Compliant |
| 753 | ||
| IMBG65R260M1HXTMA1 | Infineon Technologies AG | SiC MOSFETs SILICON CARBIDE MOSFET RoHS : Compliant |
| 671 | ||
| IMBG65R022M1HXTMA1 | Infineon Technologies AG | SiC MOSFETs SILICON CARBIDE MOSFET RoHS : Compliant |
| 653 | ||
| IMBG65R060M2HXTMA1 | Infineon Technologies AG | SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? RoHS : Compliant |
| 416 | ||
| IMBG65R033M2HXTMA1 | Infineon Technologies AG | SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? RoHS : Compliant |
| 280 | ||
| IMBG65R010M2HXTMA1 | Infineon Technologies AG | SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? RoHS : Compliant |
| 256 | ||
| IMBG65R020M2HXTMA1 | Infineon Technologies AG | SiC MOSFETs SILICON CARBIDE MOSFET RoHS : Compliant |
| 129 | ||
| RE70G65R0C02 | Vishay Intertechnologies | Wirewound Resistors - Chassis Mount 20watts 65ohms 1% Inductive RoHS : Not Compliant |
| 108 | ||
| RE65G65R0C02 | Vishay Intertechnologies | Wirewound Resistors - Chassis Mount RH-10 65 1% RE65G65R0 C02 RoHS : Compliant |
| 36 | ||
![]() Newark | IMBG65R010M2HXTMA1 | Infineon Technologies AG | SIC MOSFET, N-CH, 650V, 158A, TO-263; RoHS : Compliant |
| 823 | |
| IMBG65R010M2HXTMA1 | Infineon Technologies AG | SIC MOSFET, N-CH, 650V, 158A, TO-263; RoHS : Compliant |
| 823 | ||
| IMBG65R022M1HXTMA1 | Infineon Technologies AG | MOSFET, SIC, N-CH, 650V, 64A, TO-263; RoHS : Compliant |
| 736 | ||
| IMBG65R022M1HXTMA1 | Infineon Technologies AG | MOSFET, SIC, N-CH, 650V, 64A, TO-263; RoHS : Compliant |
| 736 | ||
| IMBG65R015M2HXTMA1 | Infineon Technologies AG | SIL CARB MOSFET, SINGLE, N CHANNEL, 115A; RoHS : Compliant |
| 668 | ||
| IMBG65R015M2HXTMA1 | Infineon Technologies AG | SIL CARB MOSFET, SINGLE, N CHANNEL, 115A; RoHS : Compliant |
| 668 | ||
| IMBG65R050M2HXTMA1 | Infineon Technologies AG | SIL CARB MOSFET, SINGLE, N CHANNEL, 41A; RoHS : Compliant |
| 580 | ||
| IMBG65R050M2HXTMA1 | Infineon Technologies AG | SIL CARB MOSFET, SINGLE, N CHANNEL, 41A; RoHS : Compliant |
| 580 | ||
| IMBG65R020M2HXTMA1 | Infineon Technologies AG | SIL CARB MOSFET, SINGLE, N CHANNEL, 91A; RoHS : Compliant |
| 453 | ||
| IMBG65R020M2HXTMA1 | Infineon Technologies AG | SIL CARB MOSFET, SINGLE, N CHANNEL, 91A; RoHS : Compliant |
| 453 | ||
| IMBG65R026M2HXTMA1 | Infineon Technologies AG | SIC MOSFET, N-CH, 650V, 68A, TO-263; RoHS : Compliant |
| 275 | ||
| IMBG65R026M2HXTMA1 | Infineon Technologies AG | SIC MOSFET, N-CH, 650V, 68A, TO-263; RoHS : Compliant |
| 275 | ||
| IMBG65R060M2HXTMA1 | Infineon Technologies AG | SIC MOSFET, N-CH, 650V, 34.9A, TO-263; RoHS : Compliant |
| 227 | ||
| IMBG65R107M1HXTMA1 | Infineon Technologies AG | MOSFET, SIC, N-CH, 650V, 24A, TO-263; RoHS : Compliant |
| 3 | ||
| IMBG65R107M1HXTMA1 | Infineon Technologies AG | MOSFET, SIC, N-CH, 650V, 24A, TO-263; RoHS : Compliant |
| 3 | ||
![]() Rochester Electronics | IMBG65R022M1HXTMA1 | Infineon Technologies AG | IMBG65R022M1H - SILICON CARBIDE MOSFET RoHS : Compliant |
| 600 | |
| IMBG65R163M1HXTMA1 | Infineon Technologies AG | IMBG65R163M1H - SILICON CARBIDE MOSFET RoHS : Compliant |
| 10,439 | ||
| IMBG65R039M1HXTMA1 | Infineon Technologies AG | IMBG65R039M1H - SILICON CARBIDE MOSFET RoHS : Compliant |
| 1,878 | ||
| IMBG65R260M1HXTMA1 | Infineon Technologies AG | IMBG65R260M1H - SILICON CARBIDE MOSFET RoHS : Compliant |
| 1,022 | ||
| IMBG65R083M1HXTMA1 | Infineon Technologies AG | IMBG65R083M1H - SILICON CARBIDE MOSFET RoHS : Compliant |
| 4,100 | ||
| IMBG65R107M1HXTMA1 | Infineon Technologies AG | IMBG65R107M1H - SILICON CARBIDE MOSFET RoHS : Compliant |
| 3,995 | ||
| IMBG65R030M1HXTMA1 | Infineon Technologies AG | MOSFET N-Channel 650V 63A (Tc) TO-263-8 T/R RoHS : Compliant |
| 2,861 | ||
| IMBG65R072M1HXTMA1 | Infineon Technologies AG | IMBG65R072M1H - SILICON CARBIDE MOSFET RoHS : Compliant |
| 14,677 | ||
![]() TME | IMBG65R163M1HXTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | |
| IMBG65R040M2HXTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IMBG65R107M1HXTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IMBG65R083M1HXTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IMBG65R048M1HXTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IMBG65R022M1HXTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IMBG65R030M1HXTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IMBG65R072M1HXTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IMBG65R020M2HXTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IMBG65R260M1HXTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IMBG65R057M1HXTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IMBG65R010M2HXTMA1 | Infineon Technologies AG | Transistor: N-MOSFET |
| 0 | ||
| IMBG65R060M2HXTMA1 | Infineon Technologies AG | Transistor: N-MOSFET |
| 0 | ||
| IMBG65R039M1HXTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IMBG65R007M2HXTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
![]() Rutronik | IMBG65R015M2HXTMA1 | Infineon Technologies AG | N-CH 650V 115A 18,9mOhm at 15V TO263-7 RoHS : Compliant |
| 2,000 | |
| IMBG65R026M2HXTMA1 | Infineon Technologies AG | N-CH 650V 68A 34mOhm at 15V TO263-7 RoHS : Compliant |
| 2,000 | ||
| IMBG65R033M2HXTMA1 | Infineon Technologies AG | N-CH 650V 58A 43mOhm at 15V TO263-7 RoHS : Compliant |
| 2,000 | ||
| IMBG65R040M2HXTMA1 | Infineon Technologies AG | N-CH 650V 49A 40mOhm at 18V TO263-7 RoHS : Compliant |
| 2,000 | ||
| IMBG65R020M2HXTMA1 | Infineon Technologies AG | N-CH 650V 91A 26mOhm at 15V TO263-7 RoHS : Compliant |
| 2,000 | ||
| IMBG65R060M2HXTMA1 | Infineon Technologies AG | N-CH 650V 34,9A 78mOhm at 15V TO263-7 RoHS : Compliant |
| 2,000 | ||
| IMBG65R007M2HXTMA1 | Infineon Technologies AG | N-CH 650V 238A 6.7mOhm at 18V TO263-7 RoHS : Compliant |
| 2,000 | ||
![]() EBV Elektronik | IMBG65R083M1HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 28 A 650 V 0083 ohm TO263 (Alt: SP005539181) RoHS : Compliant | 7,000 | ||
| IMBG65R260M1HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 6 A 650 V 026 ohm TO263 (Alt: SP005539192) RoHS : Compliant | 4,000 | |||
| IMBG65R030M1HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 63 A 650 V 003 ohm TO263 (Alt: SP005539165) RoHS : Compliant | 4,000 | |||
| IMBG65R022M1HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 64 A 650 V 0022 ohm TO263 (Alt: SP005539143) RoHS : Compliant | 3,000 | |||
| IMBG65R107M1HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 24 A 650 V 0107 ohm TO263 (Alt: SP005539184) RoHS : Compliant | 3,000 | |||
| IMBG65R057M1HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 39 A 650 V 0057 ohm TO263 (Alt: SP005539175) RoHS : Compliant | 2,000 | |||
| IMBG65R072M1HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 33 A 650 V 0072 ohm TO263 (Alt: SP005539178) RoHS : Compliant | 2,000 | |||
| IMBG65R039M1HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 54 A 650 V 0039 ohm TO263 (Alt: SP005539169) RoHS : Compliant | 1,000 | |||
| IMBG65R048M1HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 45 A 650 V 64 Milliohms TO263 D2PAK 7 Pins (Alt: SP005539172) RoHS : Compliant | 1,000 | |||
| IMBG65R007M2HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 238 A 650 V 61 Milliohms TO263 D2PAK 7 Pins (Alt: SP005912570) RoHS : Compliant | 1,000 | |||
| IMBG65R009M1HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 170 A 650 V 00136 ohm TO263 D2PAK (Alt: SP005570886) RoHS : Compliant | 0 | |||
| IMBG65R010M2HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 158 A 650 V 9100 ohm TO263 D2PAK (Alt: SP005961932) RoHS : Compliant | 0 | |||
| IMBG65R015M2HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 115 A 650 V 00132 ohm TO263 (Alt: SP005917205) RoHS : Compliant | 0 | |||
| IMBG65R163M1HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 17 A 650 V 0163 ohm TO263 (Alt: SP005539187) RoHS : Compliant | 0 | |||
| IMBG65R020M2HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 91 A 650 V 0018 ohm TO263 (Alt: SP005917206) RoHS : Compliant | 0 | |||
![]() Master Electronics | ADTSG65RV | APEM Inc | Tactile Switch - SPST-NO - Off-Mom - 0.05A 12VDC - Standard Actuator - 9.50mm Actuator Height - Top Actuated - 260gf - PC Pin. RoHS : Compliant |
| 0 |
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