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L-65-R 销售商 |
| 销售商 | 部件名 | 制造商 | 功能描述 | Price | Qty. BuyNow | |
![]() DigiKey | IPL65R230C7AUMA1![]() | Infineon Technologies AG | MOSFET N-CH 650V 10A 4VSON RoHS : Compliant |
| 6,837 | |
IPL65R230C7AUMA1![]() | Infineon Technologies AG | MOSFET N-CH 650V 10A 4VSON RoHS : Compliant |
| 6,837 | ||
IPL65R230C7AUMA1![]() | Infineon Technologies AG | MOSFET N-CH 650V 10A 4VSON RoHS : Compliant |
| 6,837 | ||
| IGL65R110D2XUMA1 | Infineon Technologies AG | GANFET N-CH 650V 16A 8TDFN |
| 2,480 | ||
| IGL65R110D2XUMA1 | Infineon Technologies AG | GANFET N-CH 650V 16A 8TDFN |
| 2,480 | ||
| IGL65R110D2XUMA1 | Infineon Technologies AG | GANFET N-CH 650V 16A 8TDFN |
| 2,480 | ||
| IPL65R195C7AUMA1 | Infineon Technologies AG | MOSFET N-CH 650V 12A 4VSON RoHS : Compliant |
| 2,472 | ||
| IPL65R195C7AUMA1 | Infineon Technologies AG | MOSFET N-CH 650V 12A 4VSON RoHS : Compliant |
| 2,472 | ||
| IPL65R195C7AUMA1 | Infineon Technologies AG | MOSFET N-CH 650V 12A 4VSON RoHS : Compliant |
| 2,472 | ||
| IPL65R160CFD7AUMA1 | Infineon Technologies AG | COOLMOS CFD7 SUPERJUNCTION MOSFE RoHS : Compliant |
| 2,300 | ||
| IPL65R160CFD7AUMA1 | Infineon Technologies AG | COOLMOS CFD7 SUPERJUNCTION MOSFE RoHS : Compliant |
| 2,300 | ||
| IPL65R160CFD7AUMA1 | Infineon Technologies AG | COOLMOS CFD7 SUPERJUNCTION MOSFE RoHS : Compliant |
| 2,300 | ||
| IPL65R095CFD7AUMA1 | Infineon Technologies AG | COOLMOS CFD7 SUPERJUNCTION MOSFE RoHS : Compliant |
| 70 | ||
| IPL65R095CFD7AUMA1 | Infineon Technologies AG | COOLMOS CFD7 SUPERJUNCTION MOSFE RoHS : Compliant |
| 70 | ||
| IPL65R095CFD7AUMA1 | Infineon Technologies AG | COOLMOS CFD7 SUPERJUNCTION MOSFE RoHS : Compliant |
| 70 | ||
![]() Mouser Electronics | DPX1608LL65R2455A | Pulse Electronics Corporation | Signal Conditioning 2012 2.4/5GHz Diplexer Type 65 RoHS : Compliant |
| 39,990 | |
| IPL65R230C7 | Infineon Technologies AG | MOSFETs N-Ch 650V 10A ThinPAK-4 CoolMOS C7 RoHS : Compliant |
| 6,349 | ||
| IPL65R130C7AUMA1 | Infineon Technologies AG | MOSFETs N-Ch 650V 15A VSON-4 RoHS : Compliant |
| 2,981 | ||
| IGL65R080D2XUMA1 | Infineon Technologies AG | GaN FETs CoolGaN Transistor 650 V G5 RoHS : Compliant |
| 2,787 | ||
| IGL65R110D2XUMA1 | Infineon Technologies AG | GaN FETs CoolGaN Transistor 650 V G5 RoHS : Compliant |
| 2,711 | ||
| IPL65R195C7AUMA1 | Infineon Technologies AG | MOSFETs HIGH POWER BEST IN CLASS RoHS : Compliant |
| 2,671 | ||
| IGL65R140D2XUMA1 | Infineon Technologies AG | GaN FETs CoolGaN Transistor 650 V G5 RoHS : Compliant |
| 2,285 | ||
| IPL65R160CFD7AUMA1 | Infineon Technologies AG | MOSFETs HIGH POWER_NEW RoHS : Compliant |
| 2,017 | ||
| IGL65R055D2XUMA1 | Infineon Technologies AG | GaN FETs CoolGaN Transistor 650 V G5 RoHS : Compliant |
| 1,569 | ||
| IPL65R200CFD7AUMA1 | Infineon Technologies AG | MOSFETs LOW POWER_NEW RoHS : Compliant |
| 2 | ||
| IPL65R095CFD7AUMA1 | Infineon Technologies AG | MOSFETs HIGH POWER_NEW RoHS : Compliant |
| 0 | ||
| IPL65R099C7AUMA1 | Infineon Technologies AG | MOSFETs HIGH POWER BEST IN CLASS RoHS : Compliant |
| 0 | ||
| IPL65R195C7 | Infineon Technologies AG | MOSFETs HIGH POWER BEST IN CLASS RoHS : Compliant |
| 0 | ||
| FML65RAN | Panduit Corp | Media Converters 1 RU rackmount OneMode with 6-ports and an OM2 pigtail |
| 0 | ||
| IPL65R070C7AUMA1 | Infineon Technologies AG | MOSFETs HIGH POWER BEST IN CLASS RoHS : Compliant |
| 0 | ||
![]() Newark | IPL65R095CFD7AUMA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 29A, VSON-4; RoHS : Compliant |
| 10,162 | |
| IPL65R130CFD7AUMA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 21A, VSON-4; RoHS : Compliant |
| 4,728 | ||
| IPL65R130CFD7AUMA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 21A, VSON-4; RoHS : Compliant |
| 4,728 | ||
| IGL65R140D2XUMA1 | Infineon Technologies AG | GAN TRANSISTOR, 650V, 13A, TSON; RoHS : Compliant |
| 2,977 | ||
| IGL65R140D2XUMA1 | Infineon Technologies AG | GAN TRANSISTOR, 650V, 13A, TSON; RoHS : Compliant |
| 2,977 | ||
| IGL65R110D2XUMA1 | Infineon Technologies AG | GAN TRANSISTOR, 650V, 16A, TSON; RoHS : Compliant |
| 2,880 | ||
| IGL65R110D2XUMA1 | Infineon Technologies AG | GAN TRANSISTOR, 650V, 16A, TSON; RoHS : Compliant |
| 2,880 | ||
IPL65R070C7AUMA1![]() | Infineon Technologies AG | MOSFET, N-CH, 650V, 28A, VSON-5; RoHS : Compliant |
| 2,527 | ||
IPL65R070C7AUMA1![]() | Infineon Technologies AG | MOSFET, N-CH, 650V, 28A, VSON-5; RoHS : Compliant |
| 2,527 | ||
| IGL65R080D2XUMA1 | Infineon Technologies AG | GAN TRANSISTOR, 650V, 18A, TSON; RoHS : Compliant |
| 1,931 | ||
| IGL65R080D2XUMA1 | Infineon Technologies AG | GAN TRANSISTOR, 650V, 18A, TSON; RoHS : Compliant |
| 1,931 | ||
| IPL65R200CFD7AUMA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 14A, VSON-4; RoHS : Compliant |
| 32 | ||
| IPL65R200CFD7AUMA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 14A, VSON-4; RoHS : Compliant |
| 32 | ||
IPL65R230C7AUMA1![]() | Infineon Technologies AG | MOSFET, N-CH, 650V, 10A, VSON-5; RoHS : Compliant |
| 30 | ||
IPL65R230C7AUMA1![]() | Infineon Technologies AG | MOSFET, N-CH, 650V, 10A, VSON-5; RoHS : Compliant |
| 30 | ||
![]() Rochester Electronics | IPL65R095CFD7AUMA1 | Infineon Technologies AG | IPL65R095CFD7 - HIGH POWER_NEW RoHS : Compliant |
| 2,820 | |
| IPL65R650C6SATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 33,112 | ||
| IPL65R160CFD7AUMA1 | Infineon Technologies AG | IPL65R160CFD7 - HIGH POWER_NEW RoHS : Compliant |
| 4,475 | ||
| IPL65R195C7AUMA1 | Infineon Technologies AG | MOSFET N-Channel 650V 12A (Tc) 4-SFN T/R RoHS : Compliant |
| 985 | ||
IPL65R230C7AUMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 10A I(D), 650V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 25,841 | ||
| IPL65R1K5C6SE8211ATMA1 | Infineon Technologies AG | IPL65R1K5 - 650V and 700V CoolMOS N-Channel Power MOSFET RoHS : Compliant |
| 12,514 | ||
| IPL65R310E6AUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 3,000 | ||
| IPL65R165CFDAUMA2 | Infineon Technologies AG | Power Field-Effect Transistor, 21.3A I(D), 650V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 685,588 | ||
| IPL65R660E6AUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 2,680 | ||
| IPL65R1K5C6SATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 81,852 | ||
| IPL65R130CFD7AUMA1 | Infineon Technologies AG | IPL65R130CFD7 - HIGH POWER_NEW RoHS : Compliant |
| 3,000 | ||
| IPL65R099C7AUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 21A I(D), 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 2,320 | ||
| IPL65R200CFD7AUMA1 | Infineon Technologies AG | IPL65R200CFD7 - LOW POWER_NEW RoHS : Compliant |
| 3,125 | ||
| IPL65R165CFDAUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 21.3A I(D), 650V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 27,018 | ||
| IPL65R1K0C6SATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 67,138 | ||
![]() TME | IPL65R1K5C6SATMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 650V; 3A; 26.6W; PG-VSON-4 RoHS : Compliant |
| 6 | |
| IPL65R095CFD7AUMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IPL65R460CFDAUMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4 RoHS : Compliant |
| 0 | ||
| IPL65R310E6AUMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 650V; 13.1A; 104W; PG-VSON-4 RoHS : Compliant |
| 0 | ||
| IGL65R055D2XUMA1 | Infineon Technologies AG | Transistor: N-MOSFET |
| 0 | ||
| IPL65R340CFDAUMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 650V; 10.9A; 104.2W; PG-VSON-4 RoHS : Compliant |
| 0 | ||
| IPL65R130C7AUMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 650V; 15A; 102W; PG-VSON-4 RoHS : Compliant |
| 0 | ||
| IPL65R190E6AUMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4 RoHS : Compliant |
| 0 | ||
| IPL65R210CFDAUMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 650V; 16.6A; 151W; PG-VSON-4 RoHS : Compliant |
| 0 | ||
| IPL65R160CFD7AUMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IPL65R420E6AUMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 650V; 10.1A; 83W; PG-VSON-4 RoHS : Compliant |
| 0 | ||
| IPL65R165CFDAUMA2 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IPL65R115CFD7AUMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IPL65R660E6AUMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 650V; 7A; 63W; PG-VSON-4 RoHS : Compliant |
| 0 | ||
| IPL65R065CFD7AUMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
![]() Powell Electronics | CL65RWKBK | Hammond Manufacturing | CABLE LADDER 6W RACK WALL KIT RoHS : Compliant |
| 2 | |
![]() Chip 1 Exchange | DPX1608LL65R2455A | Pulse Electronics Corporation | INSTOCK RoHS : Compliant | 1,326,000 | ||
| IPL65R115CFD7AUMA1 | INSTOCK | 10,313 | ||||
| IPL65R115CFD7AUMA1 | Infineon Technologies AG | INSTOCK RoHS : Compliant | 10,271 | |||
![]() DB Roberts | PL-65R | Sugatsune Kogyo Co Ltd | 0 | |||
![]() EBV Elektronik | IPL65R230C7AUMA1![]() | Infineon Technologies AG | Power MOSFET N Channel 650 V 10 A 0204 ohm VSON Surface Mount (Alt: SP001032728) RoHS : Compliant | 3,000 | ||
| IPL65R115CFD7AUMA1 | Infineon Technologies AG | Transistor MOSFET NChannel 700V 24A 4Pin VSON TR (Alt: SP005559260) RoHS : Compliant | 3,000 | |||
IPL65R070C7AUMA1![]() | Infineon Technologies AG | Trans MOSFET NCH 700V 28A 5Pin VSON TR (Alt: SP001032720) RoHS : Compliant | 0 | |||
| IPL65R195C7AUMA1 | Infineon Technologies AG | Transistor MOSFET NCH 650V 12A 4Pin VSON TR (Alt: SP001032726) RoHS : Compliant | 0 | |||
| IGL65R055D2XUMA1 | Infineon Technologies AG | Gallium Nitride GaN Transistor 650 V 22 A 007 ohm 47 nC TSON Surface Mount (Alt: SP006065169) RoHS : Compliant | 0 | |||
| IPL65R130C7AUMA1 | Infineon Technologies AG | Trans MOSFET NCH 650MinV 15A 4Pin VSON TR (Alt: SP001032724) RoHS : Compliant | 0 | |||
| IGL65R140D2XUMA1 | Infineon Technologies AG | Gallium Nitride GaN Transistor 650 V 13 A 017 ohm 18 nC TSON Surface Mount (Alt: SP006065162) RoHS : Compliant | 0 | |||
| IPL65R165CFDAUMA2 | Infineon Technologies AG | (Alt: SP002050996) RoHS : Compliant | 0 | |||
| IPL65R099C7AUMA1 | Infineon Technologies AG | Trans MOSFET NCH 700V 21A 5Pin VSON TR (Alt: SP001032722) RoHS : Compliant | 0 | |||
| IGL65R080D2XUMA1 | Infineon Technologies AG | Gallium Nitride GaN Transistor 650 V 18 A 01 ohm 33 nC TSON Surface Mount (Alt: SP006065174) RoHS : Compliant | 0 | |||
| IPL65R095CFD7AUMA1 | Infineon Technologies AG | Power MOSFET N Channel 650 V 29 A 0068 ohm VSON Surface Mount (Alt: SP005559261) RoHS : Compliant | 0 | |||
| IPL65R160CFD7AUMA1 | Infineon Technologies AG | Transistor MOSFET NChannel 700V 17A 4Pin VSON TR (Alt: SP005559258) RoHS : Compliant | 0 | |||
| IPL65R130CFD7AUMA1 | Infineon Technologies AG | Transistor MOSFET NChannel 700V 21A 4Pin VSON TR (Alt: SP005559259) RoHS : Compliant | 0 | |||
| IPL65R200CFD7AUMA1 | Infineon Technologies AG | Transistor MOSFET NChannel 700V 14A 4Pin VSON TR (Alt: SP005559257) RoHS : Compliant | 0 | |||
![]() Master Electronics | CL65RWKBK | Hammond Manufacturing | RoHS : Compliant |
| 0 | |
![]() Sager | FML65RAN | Panduit Corp | 1 RU RACKMOUNT ONEMODE WITH 6-PORTS AND AN OM2 PIGTAIL | 0 | ||
![]() Vyrian | IPL65R165CFDAUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 21.3A I(D), 650V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 12,473 | ||
| IPL65R190E6AUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 12,031 | |||
| IPL65R1K0C6SATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 11,715 | |||
| IPL65R210CFDAUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 16.6A I(D), 650V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 11,378 | |||
IPL65R230C7AUMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 10A I(D), 650V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 10,873 | |||
| IPL65R340CFDAUMA2 | Infineon Technologies AG | Power Field-Effect Transistor, 10.9A I(D), 650V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 10,578 | |||
| IPL65R210CFDAUMA2 | Infineon Technologies AG | Power Field-Effect Transistor, 16.6A I(D), 650V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 9,330 | |||
| IPL65R660E6AUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 8,681 | |||
| IPL65R420E6AUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 7,723 | |||
| IPL65R165CFDAUMA2 | Infineon Technologies AG | Power Field-Effect Transistor, 21.3A I(D), 650V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 6,461 | |||
| IPL65R340CFDAUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 10.9A I(D), 650V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 5,773 | |||
| IPL65R310E6AUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 4,044 | |||
![]() Win Source Electronics | IPL65R070C7 | Infineon Technologies AG | Increased MOSFET dv/dt ruggedness RoHS : Compliant |
| 17,132 |
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