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U60-R 销售商 |
| 销售商 | 部件名 | 制造商 | 功能描述 | Price | Qty. BuyNow | |
![]() DigiKey | IPU60R2K0C6BKMA1 | Rochester Electronics LLC | MOSFET N-CH 600V 2.4A TO251-3 |
| 352,500 | |
| IPU60R2K0C6AKMA1 | Rochester Electronics LLC | MOSFET N-CH 600V 2.4A TO251-3 |
| 47,296 | ||
| IPU60R1K4C6BKMA1 | Rochester Electronics LLC | MOSFET N-CH 600V 3.2A TO251-3 |
| 40,500 | ||
| IPU60R3K4CEAKMA1 | Rochester Electronics LLC | MOSFET N-CH 600V 2.6A TO251-3 |
| 13,500 | ||
| IPU60R2K1CEBKMA1 | Rochester Electronics LLC | MOSFET N-CH 600V 2.3A TO251-3 |
| 6,512 | ||
| TAR06ATNU60R4 | Viking Technology | RES SMD 60.4 OHM 1/2W 1206 |
| 5,000 | ||
| TAR06BTBU60R4 | Viking Technology | RES SMD 60.4 OHM 1/2W 1206 |
| 5,000 | ||
| TSSE3U60 RVG | Taiwan Semiconductor | DIODE SCHOTTKY 60V 3A SOD123HE | 3,265 | |||
| TSSE3U60 RVG | Taiwan Semiconductor | DIODE SCHOTTKY 60V 3A SOD123HE |
| 3,265 | ||
| TSSE3U60 RVG | Taiwan Semiconductor | DIODE SCHOTTKY 60V 3A SOD123HE |
| 3,000 | ||
| IPU60R1K4C6AKMA1 | Rochester Electronics LLC | PFET, 600V, 1.4OHM, 1-ELEMENT, N |
| 2,370 | ||
| GSJU60R880 | Suzhou Good-Ark Electronics Co Ltd | MOSFET, N-CH, SINGLE, 5.00A, 600 RoHS : Compliant |
| 1,988 | ||
| GSFU60R190 | Suzhou Good-Ark Electronics Co Ltd | MOSFET, N-CH, SINGLE, 20.00A, 60 RoHS : Compliant |
| 941 | ||
| GSFU60R360 | Suzhou Good-Ark Electronics Co Ltd | MOSFET, N-CH, SINGLE, 11.00A, 60 RoHS : Compliant |
| 889 | ||
| APTML100U60R020T1AG | Microchip Technology Inc | MOSFET N-CH 1000V 20A SP1 RoHS : Compliant |
| 12 | ||
![]() Mouser Electronics | IPU60R1K5CEAKMA2 | Infineon Technologies AG | MOSFETs CONSUMER RoHS : Compliant |
| 2,918 | |
| IPU60R2K1CEAKMA1 | Infineon Technologies AG | MOSFETs CONSUMER RoHS : Compliant |
| 2,665 | ||
| RW80U60R4FB12 | Vishay Intertechnologies | Wirewound Resistors - Through Hole G-3-125 60.4 1% RW80U60R4F B12 |
| 0 | ||
| FA-128 50.0000M-80AAAAU60RE0 | Seiko Epson Corporation | Crystals FA-128 50.0000M-80AAAAU60RE0: XTAL MHZ 8.0PF +/-10PPM +/-10PPM -20 75CESR=60 OHM DL=100uW 1K TR |
| 0 | ||
| FA-128 28.6363M-60AAAAU60RE0 | Seiko Epson Corporation | Crystals FA-128 28.6363M-60AAAAU60RE0: XTAL MHZ 6.0PF +/-10PPM +/-10PPM -20 75CESR=60 OHM DL=100uW 1K TR |
| 0 | ||
| FA-128 28.6363M-60AAAAU60RE5 | Seiko Epson Corporation | Crystals FA-128 28.6363M-60AAAAU60RE5: XTAL MHZ 6.0PF +/-10PPM +/-10PPM -20 75CESR=60 OHM DL=100uW 3K TR |
| 0 | ||
| FA-128 32.00M-60AAAAU60RE0 | Seiko Epson Corporation | Crystals FA-128 32.00M-60AAAAU60RE0: XTL 6.0PF +/-10PPM +/-10PPM-20 75C ESR=60OHM DL=100uW 1K TR |
| 0 | ||
| FA-128 32.00M-60AAAAU60RE5 | Seiko Epson Corporation | Crystals FA-128 32.00M-60AAAAU60RE5: XTL 6.0PF +/-10PPM +/-10PPM-20 75C ESR=60OHM DL=100uW 3K TR |
| 0 | ||
| FA-20H 26.00M-F0AAAAU60RG0 | Seiko Epson Corporation | Crystals FA-20H 26.00M-F0AAAAU60RG0: XTL MHZ 15PF +/-10PPM +/-10PPM -20 75C ESR=60 OHM 1K TR RoHS : Compliant |
| 0 | ||
| FA-118T 24.00M-C0AAAAU60RE0 | Seiko Epson Corporation | Crystals FA-118T 24.00M-C0AAAAU60RE0: XTL MHZ 12.0PF +/-10PPM +/-10PPM-20 75CESR=60 OHM DL=100uW 1K TR RoHS : Compliant |
| 0 | ||
| TSSA3U60 | Taiwan Semiconductor | Schottky Diodes & Rectifiers 3A, 60V, Trench Schottky RoHS : Compliant |
| 0 | ||
| FA-128 50.0000M-80AAAAU60REB | Seiko Epson Corporation | Crystals FA-128 50.0000M-80AAAAU60REB: XTAL MHZ 8.0PF +/-10PPM +/-10PPM -20 75CESR=60 OHM DL=100uW BULK |
| 0 | ||
| FA-128 32.00M-60AAAAU60REX | Seiko Epson Corporation | Crystals FA-128 32.00M-60AAAAU60REX: XTL 6.0PF +/-10PPM +/-10PPM-20 75C ESR=60OHM DL=100uW ANY TR |
| 0 | ||
| FA-128 32.00M-60AAAAU60RE3 | Seiko Epson Corporation | Crystals FA-128 32.00M-60AAAAU60RE3: XTL 6.0PF +/-10PPM +/-10PPM-20 75C ESR=60OHM DL=100uW 250TR |
| 0 | ||
| FA-128 50.0000M-80AAAAU60RE3 | Seiko Epson Corporation | Crystals FA-128 50.0000M-80AAAAU60RE3: XTAL MHZ 8.0PF +/-10PPM +/-10PPM -20 75CESR=60 OHM DL=100uW 250TR |
| 0 | ||
![]() Newark | IPU60R2K1CEAKMA1 | Infineon Technologies AG | MOSFET, N-CH, 600V, 3.7A, TO-251; RoHS : Compliant |
| 134 | |
| 4043W2PBU60R40XE | Amphenol CONEC | RoHS : Not Compliant |
| 0 | ||
![]() RS | 1DU60R | Altech Corporation | MINI CIRCUIT BREAKER, DIN RAIL, 60 A, 480Y/277 VAC, UL1077, 1 POLE, R SERIES |
| 1 | |
| 2DU60R | Altech Corporation | MINIATURE CIRCUIT BREAKER, THERMAL, 60A, 2 POLE, 480Y/277 VAC, R SERIES |
| 1 | ||
![]() Rochester Electronics | IPU60R1K4C6AKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant |
| 17,370 | |
| IPU60R3K4CEAKMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant |
| 14,255 | ||
IPU60R1K5CEBKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 5A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS : Compliant |
| 193,000 | ||
IPU60R2K1CEBKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS : Compliant |
| 6,512 | ||
IPU60R1K4C6BKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant |
| 41,766 | ||
IPU60R2K0C6AKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant |
| 47,296 | ||
IPU60R1K5CEAKMA2![]() | Infineon Technologies AG | MOSFET N-Channel 150V 43A (Tc) TO-220-3 Tube RoHS : Compliant |
| 440 | ||
IPU60R950C6AKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant |
| 118,421 | ||
IPU60R1K0CEAKMA2![]() | Infineon Technologies AG | Power Field-Effect Transistor, 6.8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS : Compliant |
| 19,500 | ||
IPU60R2K0C6BKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant |
| 354,905 | ||
| IPU60R600C6BKMA1 | International Rectifier | Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant |
| 877 | ||
![]() TME | IPU60R1K5CEAKMA2![]() | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | |
| IPU60R2K1CEAKMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 600V; 3.7A; 38W; IPAK,TO251 RoHS : Compliant |
| 0 | ||
![]() Interstate Connecting Components | 4043W2PBU60R40X | Conec Corporation | D-SUB COMBI STIFTL. 43W2 IP67 | 0 | ||
![]() Richardson RFPD | CR-50U60-R | Teledyne Relays | RF COAXIAL SWITCH RoHS : Compliant | 0 | ||
| APTML100U60R020T1AG | Microchip Technology Inc | Trans MOSFET N-CH 1KV 20A 12-Pin Case SP-1 Tube RoHS : Compliant | 0 | |||
| CCR-50U60-R | Teledyne Relays | RF COAXIAL SWITCH RoHS : Compliant | 0 | |||
![]() Rutronik | IPU60R2K1CEAKMA1 | Infineon Technologies AG | N-CH 650V 3,7A 2100mOhm TO251 RoHS : Compliant |
| 1,425 | |
![]() Chip 1 Exchange | IPU60R1K0CE | Infineon Technologies AG | INSTOCK RoHS : Compliant | 1,950 | ||
![]() EBV Elektronik | TSSW3U60 RQG | Taiwan Semiconductor | (Alt: TSSW3U60 RQG) RoHS : Compliant | 0 | ||
IPU60R1K5CEAKMA2![]() | Infineon Technologies AG | (Alt: SP001396898) RoHS : Compliant | 0 | |||
| IPU60R2K1CEAKMA1 | Infineon Technologies AG | Trans MOSFET N 650V 37A 3Pin TO251 Tube (Alt: SP001493880) RoHS : Compliant | 0 | |||
![]() Master Electronics | SMA-Q0207BTCU60R4 | TE Connectivity | MELF SMA-Q 60R4 0.1% 25PPM 0207 0.5W RoHS : Compliant |
| 0 | |
| SMA-Q0207FTDU60R4 | TE Connectivity | MELF SMA-Q 60R4 1% 50PPM 0207 0.5W RoHS : Compliant |
| 0 | ||
| 4043W2PBU60R40XE | Amphenol CONEC | E Suffix = 4043W2PBU60R40X Pkgd 1/Bag RoHS : Compliant |
| 0 | ||
![]() Neutron USA | 2DU60R | Altech Corporation | CIRCUIT BREAKER; THERM; Handle; 0.5A; 1 -Pole; 277 VAC; R Series |
| 1 | |
| 1DU60R | Altech Corporation | Circuit Breaker; DIN Rail; 30 A; 277V; UL1077; 3 -Pole; R Series |
| 1 | ||
![]() Venkel Ltd. | CRG1210-U-60R4FT | VENKEL LTD | RoHS 10/10 Green CR;1210;1/3W;60.4R;�1% RoHS : Compliant | 0 | ||
| HPCR0805-U-60R4FT | VENKEL LTD | High Power CR;0805;1/3W;60.4R;�1% RoHS : Compliant | 0 | |||
![]() Vyrian | IPU60R600C6BKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant | 11,919 | ||
IPU60R950C6AKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant | 11,200 | |||
IPU60R600C6AKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant | 10,358 | |||
IPU60R1K0CEAKMA2![]() | Infineon Technologies AG | Power Field-Effect Transistor, 6.8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS : Compliant | 9,417 | |||
IPU60R1K0CEAKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 6.8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS : Compliant | 9,115 | |||
IPU60R950C6BKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant | 8,925 | |||
IPU60R1K5CEAKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 5A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS : Compliant | 8,872 | |||
IPU60R1K0CEBKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 6.8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS : Compliant | 8,244 | |||
IPU60R1K4C6AKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant | 7,540 | |||
| APTML100U60R020T1AG | Microchip Technology Inc | Power Field-Effect Transistor, 20A I(D), 1000V, 0.72ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 6,420 | |||
IPU60R1K5CEBKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 5A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS : Compliant | 5,507 | |||
| IPU60R1K4C6 | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant | 4,580 | |||
![]() Win Source Electronics | IPU60R2K1CE | Infineon Technologies AG | Very high commutation ruggedness RoHS : Compliant |
| 19,900 | |
| IPU60R2K1CEAKMA1 | Infineon Technologies AG | CONSUMER / N-Channel 600 V 3.7A (Tc) 38W (Tc) Through Hole PG-TO251-3 RoHS : Compliant |
| 11,180 | ||
IPU60R2K1CEBKMA1![]() | Infineon Technologies AG | MOSFET N-CH 600V 2.3A TO251-3 RoHS : Compliant |
| 10,900 |
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