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BCR30AM 数据表(PDF) 4 Page - Mitsubishi Electric Semiconductor

部件名 BCR30AM
功能描述  MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
PDF  5 Pages
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制造商  MITSUBISHI [Mitsubishi Electric Semiconductor]
网页  http://www.mitsubishichips.com
标志 MITSUBISHI - Mitsubishi Electric Semiconductor

BCR30AM 数据表(HTML) 4 Page - Mitsubishi Electric Semiconductor

  BCR30AM Datasheet HTML 1Page - Mitsubishi Electric Semiconductor BCR30AM Datasheet HTML 2Page - Mitsubishi Electric Semiconductor BCR30AM Datasheet HTML 3Page - Mitsubishi Electric Semiconductor BCR30AM Datasheet HTML 4Page - Mitsubishi Electric Semiconductor BCR30AM Datasheet HTML 5Page - Mitsubishi Electric Semiconductor  
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Feb.1999
60
40
20
140
–60 –40 –20 0
80 100 120
101
103
7
5
3
2
102
7
5
3
2
4
4
TYPICAL EXAMPLE
40
60
40
20
160
120
100
60
20
0
140
–60
80
140
–40 –20 0
80 100 120
TYPICAL EXAMPLE
140
40
–40
–60
–20 0
20
60 80 100 120
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
TYPICAL EXAMPLE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
160
120
100
60
20
0
40
0
40
80
140
10
20
30
160 160 t2.3
120 120 t2.3
100 100 t2.3
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
NATURAL CONVECTION
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
COMMUTATION CHARACTERISTICS
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
160
0
23
101
57 102 23 5 7 103 23 5 7 104
80
60
40
20
100
120
140
TYPICAL EXAMPLE
Tj = 125°C
I QUADRANT
III QUADRANT
100
102
7
5
3
2
101
23
5 7 102
101
7
5
3
2
23
5 7 103
4
4
44
TYPICAL
EXAMPLE
TC = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE



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