STD888 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-case

• Thermal Resistance Junction-Case

Max

8.33

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = -30 V

Tj = 100

-10

-1

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -6 V

-10

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = -10 mA

-30

V(BR)CBO

Collector-Base

Breakdown Voltage

(IE = 0)

IC = -100

µA

-60

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = -100

µA

-6

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -500 mA

IB = -5 mA

IC = -2 A

IB = -50 mA

IC = -5 A

IB = -250 mA

IC = -6 A

IB = -250 mA

IC = -8 A

IB = -400 mA

IC = -10 A

IB = -500 mA

-0.15

-0.25

-0.70

-1

-1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = -2 A

IB = -50 mA

IC = -6 A

IB = -250 mA

-1.1

-1.4

hFE

∗

DC Current Gain

IC = -10 mA

VCE = -1 V

IC = -500 mA

VCE = -1 V

IC = -5 A

VCE = -1 V

IC = -5 A

VCE = -1V

Tj = 100

IC = -8 A

VCE = -1 V

IC = -10 A

VCE = -1 V

150

200

100

300

RESISTIVE LOAD

Delay Time

RiseTime

StorageTime

Fall Time

IC = -3 A

IB1 = - IB2 = -60 mA

VCC = -20 V

(see figure 1)

180

160

250

220

210

300

100

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %

STD888

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