STB200NF04 datasheet(2/15 Pages) STMICROELECTRONICS

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STP200NF04 - STB200NF04 - STB200NF04-1

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

(1) ISD ≤120A, di/dt ≤500A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(2) Starting Tj = 25°C, Id = 60A, VDD=30 V

(#) Current Limited by Package

Table 4: Thermal Data

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: On/Off

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

± 20

ID (#)

Drain Current (continuos) at TC = 25°C

120

ID (#)

Drain Current (continuos) at TC = 100°C

120

IDM ( )

Drain Current (pulsed)

480

PTOT

Total Dissipation at TC = 25°C

310

Derating Factor

2.07

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

1.5

V/ns

EAS (2)

Single Pulse Avalanche Energy

1.3

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 175

°C

TO-220 / I2PAK / D2PAK

Rthj-case

Thermal Resistance Junction-case Max

0.48

°C/W

Rthj-pcb

Thermal Resistance Junction-pcb Max

(see Figure 17)

°C/W

Rthj-amb

Thermal Resistance Junction-ambient (Free air) Max

62.5

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

±100

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 90 A

3.3

3.7

Ω

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