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STTH1R06RL 数据表(PDF) 2 Page - STMicroelectronics |
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STTH1R06RL 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() STTH1R06 2/9 Table 4: Thermal Resistance Table 5: Static Electrical Characteristics To evaluate the conduction losses use the following equation: P = 1.03 x IF(AV) + 0.27 IF 2 (RMS) Table 6: Dynamic Characteristics Symbol Parameter Value (max). Unit Rth(j-l) Junction to lead L = 10mm DO-41 45 °C/W SMA 30 SMB 25 Rth(j-a) Junction to ambient (1) L = 10mm DO-41 70 °C/W Note 1: Rth(j-a) is measured with a copper area S = Scm 2 (see figure12). Symbol Parameter Test conditions Min. Typ Max. Unit IR Reverse leakage current Tj = 25°C VR = VRRM 1µA Tj = 150°C 10 75 VF Forward voltage drop Tj = 25°C IF = 1A 1.7 V Tj = 150°C 1.0 1.25 Symbol Parameter Test conditions Min. Typ Max. Unit trr Reverse recovery time Tj = 25°C IF = 0.5A Irr = 0.25A IR =1A 25 ns IF = 1A dIF/dt = -50 A/µs VR =30V 30 45 tfr Forward recovery time Tj = 25°C IF = 1A dIF/dt = 100 A/µs VFR = 1.1 x VFmax 100 ns VFP Forward recovery voltage Tj = 25°C IF = 1A dIF/dt = 100 A/µs VFR = 1.1 x VFmax 10 V |
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