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KBPC800 数据表(PDF) 2 Page - Diotec Semiconductor |
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KBPC800 数据表(HTML) 2 Page - Diotec Semiconductor |
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2 / 2 page ![]() KBPC800 ... KBPC810 Characteristics Kennwerte Forward voltage Durchlass-Spannung Tj = 25°C IF = 4 A VF < 1.2 V 1) Leakage current Sperrstrom Tj = 25°C VR = VRRM IR < 5 µA Reverse recovery time Sperrverzug IF = 0.5 A through/über IR = 1 A to IR = 0.25 A trr typ. 1500 ns 1) Typical junction capacitance Typische Sperrschichtkapazität VR = 4 V Cj 30 pF 1) Thermal resistance junction to ambient (per device) Wärmewiderstand Sperrschicht – Umgebung (pro Bauteil) RthA < 10 K/W 2) Thermal resistance junction to case (per device) Wärmewiderstand Sperrschicht – Gehäuse (pro Bauteil) RthC < 3.3 K/W Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder oder Internet 1 Valid per diode – Gültig pro Diode 2 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig, wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 2 http://www.diotec.com/ © Diotec Semiconductor AG Rated forward current versus ambient temperature Zul. Richtstrom in Abh. von der Umgebungstemp. I FAV [%] 120 100 80 60 40 20 0 [°C] T A 150 100 50 0 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 10 10 1 10 10 2 -1 -2 I F [A] 0.4 0.8 1.0 1.2 1.4 1.8 [V] V F T = 25°C j T = 125°C j 150a-(5a-1.2v) |
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