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MMFTP84 数据表(PDF) 2 Page - Diotec Semiconductor |
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MMFTP84 数据表(HTML) 2 Page - Diotec Semiconductor |
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2 / 2 page ![]() MMFTP84 Characteristics Kennwerte Tj = 25°C Min. Typ. Max. Gate-Source leakage current – Gate-Source-Leckstrom VGS = ± 20 V IGSS – – ± 10 nA Gate-Source threshold voltage – Gate-Source Schwellspannung VGS = VGS, - ID = 1 mA - VGS(th) 0.8 V – 2 V Drain-Source on-state resistance – Drain-Source Einschaltwiderstand - VGS = 10 V, - ID = 130 mA RDS(on) – – 10 Ω Forward Transfer Admittance – Übertragungssteilheit - VDS = 25 V, - ID = 130 mA ׀ gfs ׀ 50 mS – – Input Capacitance – Eingangskapazität - VDS = 25 V, f = 1 MHz Ciss – – 45 pF Output Capacitance – Ausgangskapazität - VDS = 25 V, f = 1 MHz Coss – – 25 pF Reverse Transfer Capacitance – Rückwirkungskapazität - VDS = 25 V, f = 1 MHz Crss – – 12 pF Turn-On Time – Anstiegszeit VGS = 0 ... -10 V, - VDD = 40 V, - ID = 200 mA t(on) – 3 ns – Turn-Off Time – Abfallzeit VGS = -10 ... 0 V, - VDD = 40 V, - ID = 200 mA t(off) – 7 ns – Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 500 K/W 1) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG |
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