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JCS24N50H 数据表(PDF) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

部件名 JCS24N50H
功能描述  N-CHANNEL MOSFET
PDF  9 Pages
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制造商  JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]
网页  http://www.hwdz.com.cn
标志 JSMC - JILIN SINO-MICROELECTRONICS CO., LTD.

JCS24N50H 数据表(HTML) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

  JCS24N50H Datasheet HTML 1Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS24N50H Datasheet HTML 2Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS24N50H Datasheet HTML 3Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS24N50H Datasheet HTML 4Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS24N50H Datasheet HTML 5Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS24N50H Datasheet HTML 6Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS24N50H Datasheet HTML 7Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS24N50H Datasheet HTML 8Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS24N50H Datasheet HTML 9Page - JILIN SINO-MICROELECTRONICS CO., LTD.  
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R
JCS24N50H
版本：201510B
5/9
特征曲线
ELECTRICAL CHARACTERISTICS (curves)
On-Region Characteristics
IF
vs
VF
Transfer Characteristics
IR
vs
VR
On-Resistance Variation vs
Drain Current and Gate Voltage
IF(AV)
vs
TC
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
IF(AV)
vs
TC
Capacitance Characteristics
IF(AV)
vs
TC
Capacitance Characteristics
IF(AV)
vs
TC
10
0
10
1
10
-1
10
0
10
1
10
2
Notes：
1.250μs pulse test
2.T
C=25
℃
V
DS Drain-Source Voltage[V]
Top
15.0V
10.0V
9.0V
8.0V
7.0V
6.5V
6.0V
Bottom 5.5V
2
4
6
8
10
12
10
0
10
1
10
2
-55℃
25℃
V
GS Gate-Source Voltage[V]
150℃
Note:
1.VDS=20V
2.250μs Pulse Test
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
0.10
0.15
0.20
0.25
0.30
0.35
Note ：T
j=25
℃
V
GS=10V
V
GS=20V
I
D [A]
10
0
10
1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
25℃
150℃
V
SD Source-Drain voltage[V]
Note:
1.VGS=0V
2.250μs Pulse Test
10
-1
10
0
10
1
1000
2000
3000
4000
5000
6000
7000
*Note:
1.V
GS=0V
2.f=1MHz
C
iss
C
oss
C
rss
C
iss = Cgs +Cgd
(C
ds =shorted)
C
oss = Cds +Cgd
C
rss = Cgd
V
DS Drain-Source Voltage [V]



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