 2014 Microchip Technology Inc.

Preliminary

DS70005165A-page 1

Features

• High Gain:

- Typically 39 dB gain across 2.4–2.5 GHz over

temperature -20°C to +85°C

• High linear output power:

- >30 dBm P1dB

- Please refer to “Absolute Maximum Stress

Ratings” on page 5

- Meets 802.11g OFDM spectrum mask require-

ment up to 28 dBm

- Typically 25 dBm with <3% EVM, 802.11g,

54 Mbps, 350 mA current

- Typically 24 dBm with <2.5% EVM, 802.11n,

MCS7-HT20, 50% duty cycle

- Typically 23 dBm with <1.75% EVM, MCS9-

HT40, 50% duty cycle, 320 mA current

- Meets 802.11b ACPR requirement up to 28 dBm

with 30% power-added efficiency

• High-speed power-up/down

- Turn on/off time (10%-90%) <100 ns

• 10:1 VSWR survivability (unconditionally stable

up to 28 dBm)

• On-chip power detection

- >20 dB dynamic range

- VSWR- and temperature-insensitive

• Simple input/output matching

• Packages available

- 16-contact UQFN (3mm x 3mm)

• All non-Pb (lead-free) devices are RoHS compli-

ant

Applications

• WLAN (IEEE 802.11b/g/n)

• WLAN 256 QAM

• AP router

• Home RF

• Cordless phones

• 2.4 GHz ISM wireless equipment

1.0

PRODUCT DESCRIPTION

SST12CP21 is a high-power and high-gain power

amplifier (PA) based on the highly-reliable InGaP/GaAs

HBT technology.

This PA can be easily configured for high-power appli-

cations with high power-added efficiency while operat-

ing over the 2.4-2.5 GHz frequency band. It typically

provides 39 dB gain with 25% power-added efficiency

SST12CP21 has excellent linearity, typically 25 dBm at

3% EVM with 54 Mbps 802.11g operation while meet-

ing 802.11g spectrum mask at 28 dBm. SST12CP21

also has a single-ended power detector which lowers

the users’ cost for power control.

The power amplifier IC also features easy board-level

usage along with high-speed power-up/-down control.

SST12CP21 is offered in 16-contact UQFN package.

See Figure 3-1 for pin assignments and Table 4-1 for

pin descriptions.

SST12CP21

2.4 GHz High-Gain, High-Efficiency Power Amplifier