TPC817 SERIES

Taiwan Semiconductor

2

Version:C1612

PARAMETER

SYMBOL

PART NUMBER

UNIT

Input

Forward current

50

mA

Reverse voltage

6

V

Power dissipation

P

70

mW

Output

Collector-emitter voltage

80

V

Emitter-collector voltage

6

V

Collector current

50

mA

Collector power dissipation

150

mW

Total power dissipation

200

mW

Isolation voltage

5000

Vrms

Rated impulse isolation voltage

6000

V

Rated repetitive peak isolation voltage

630

V

Operating temperature

-40 to +100

°C

Storage temperature

-55 to +125

°C

Soldering temperature

260

°C

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Input

Forward voltage

1.2

1.4

V

Reverse current

10

μA

Terminal capacitance

V=0, f=1kHz

30

250

pF

Output

Collector dark current

10

-7

A

Collector-emitter

breakdown voltage

80

V

Emitter-collector

breakdown voltage

6

V

Transfer

Characteristics

Collector current

IC

2.5

30

mA

Current transfer

ration(Note 1)

CTR

80

600

%

Collector-emitter

saturation voltage

0.1

0.2

V

Isolation resistance

DC500V,

40 to 60%RH

5x10

10

10

11

Ω

Floating capacitance

V=0, f=1MHz

0.6

1.0

pF

Cut-off frequency

80

KHz

Response

time

Rise time

4

18

μs

Fall time

3

18

μs

Notes:

1.

Classification table of current transfer ratio is shown below