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EB01 数据表(PDF) 4 Page - List of Unclassifed Manufacturers |
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EB01 数据表(HTML) 4 Page - List of Unclassifed Manufacturers |
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4 / 4 page ![]() APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739 This data sheet has been carefully checked and is believed to be reliable, however, no responsibility is assumed for possible inaccuracies or omissions. All specificiations are subject to change without notice. EBO1U REV. B JANUARY 2001 © 2001 Apex Microtechnology Corporation EB01 OPERATING CONSIDERATIONS POWER SUPPLY REQUIREMENTS SUPPLY VOLTAGE MAX CURRENT HV1 50V to 500V 20A, continuous, 28A peak HV2 50V to 500V 20A, continuous, 28A peak HV3 50V to 500V 20A, continuous, 28A peak Vcc1 10V to 20V 10mA Vcc2 10V to 20V 10mA Vcc3 10V to 20V 10mA Vdd 4.5 to 20V 10mA HV1, HV2, and HV3 may be used independently, or may be one supply. Also Vcc1, Vcc2, and Vcc3 may be used independently or tied together. The Vdd supply must be compatible with the input logic. If a high voltage logic such as CMOS is used it may be tied with the Vcc supplies. HCMOS requires a 5V±10% supply SPECIAL CONSIDERATIONS GENERAL The EB01 is designed to give the user maximum flexibility in a digital or DSP based motion control system. Thermal, overvoltage, overcurrent, and crossfire protection circuits are part of the user’s design. Users should read Application Note 1, "General Operating Considerations;” and Application Note 30, “PWM Basics” for much useful information in applying this part. These Application Notes are in the “Power Integrated Circuits Data Book” and on line at www.apexmicrotech.com. GROUNDING AND BYPASSING As in any high power PWM system, grounding and bypassing are one of the keys to success. The EB01 is capable of generating 20 kW pulses with 100 n-second rise and fall times. If improperly grounded or bypassed this can cause horrible conducted and radiated EMI. In order to reduce conducted EMI, the EB01 provides a separate power ground, named HVRTN, for each high voltage supply. These grounds are electrically isolated from the logic ground (Vss) and each other. This isolation eliminates high current ground loops. However, more than 5V offset between the grounds will destroy the EB01. Apex recommends back to back high current diodes between logic and power grounds; this will maintain isolation but keep offset at a safe level. All grounds should tie together at one common point in the system. In order to reduce radiated EMI, Apex recommends a 400 µF or larger capacitor between HV and HVRTN. This capacitor should be a a switching power grade electrolytic capacitor with ESR rated at 20 kHz. This capacitor should be placed physically as close to the EB01 as possible. However, such a capacitor will typically have a few hundred milli-ohms or so ESR. Therefore, each section must also be bypassed with a low ESR 1µF or larger ceramic capacitor. In order to minimize radiated noise it is necessary to minimize the area of the loop containing high frequency current. (The size of the antenna.) Therefore the 1µF ceramic capacitors should bypass each HV to its return right at the pins the EB01. SHOOT THROUGH PROTECTION IGBTs have a relatively short turn on delay, and a long turn off delay. Unlike most semiconductor devices the turn off delay cannot be improved very much by drive circuit design. Therefore, if the turn on input to an IGBT in a half bridge circuit is applied simultaneously with the turn off input to the other IGBT in that half bridge, there will be a time when both IGBTs are simultaneously on. This will short the power rails through the IGBTs, causing excessive power dissipation and very high EMI. To avoid the shoot through condition the turn on of one IGBT must be delayed long enough for the other in the same half bridge to have completely turned off. A delay of at least 1.5 µ-seconds is required for the EB01. This delay must be provided after turning off Lin before Hin of the same half bridge may be turned on; likewise it must be provided after turning off Hin before Lin of the same half bridge may be turned on. PROTECTION CIRCUITS The EB01 does not include protection circuits. However, there is a shut down input which will turn off all IGBTs when at logic “1”. This input may be used with user designed temperature sensing and current sensing circuits to shut down the IGBTs in the event of a detected unsafe condition. This is recommended since the IGBTs may be turned off this way even if the normal input logic or DSP programming is faulty. START-UP REQUIREMENTS In order for an IGBT to be turned on, the corresponding logic input signal must make its positive transition after SD has been low for at least 1 µ-second. The lower rail IGBT in the half bridge must be turned on for at least 2 µ-seconds to charge the bootstrap capacitor before the top rail IGBT can be turned on. This must be done no more than 330 µ-seconds prior to turning on the top rail IGBT. However, if the load pulls the output to ground, the positive rail IGBT can be turned on without first briefly turning on the negative rail IGBT. An internal floating supply is used to enhance the operation of the bootstrap bias circuit. This allows the top rail IGBTs to be held on indefinitely once turned on. HEATSINK The EB01 should be provided with sufficient heatsink to dissipate 179 watts while holding a case temperature of 25°C when operating at 500V, 20A, 30kHz and 3 sections simultaneously providing maximum current. The dissipation is composed of conduction losses (IoutxVsat) up to 54 watts per half bridge and switching losses of about 4 watts per half bridge. The conduction losses are proportional to Iout; switching losses are proportional to HV supply voltage and to switching frequency. |
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