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IPD050N03L 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 IPD050N03L
功能描述  N-Channel MOSFET Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

IPD050N03L 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  IPD050N03L Datasheet HTML 1Page - Inchange Semiconductor Company Limited IPD050N03L Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor IPD050N03L, IIPD050N03L
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=1mA
30
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=250μA
1
2.2
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=30A
5
mΩ
IGSS
Gate-Source Leakage Current
VGS= 20V; VDS= 0V
0.1
μ
A
IDSS
Drain-Source Leakage Current
VDS=30V; VGS= 0V
1
μ
A
VSD
Diode forward voltage
IF=30A, VGS = 0V
1.1
V



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