DMN6040SSD-13 datasheet(2/7 Pages) DIODES

2 / 7 page

DMN6040SSD

Document number: DS35673 Rev. 5 - 2

2 of 7

www.diodes.com

November 2016

DMN6040SSD

Maximum Ratings (@TA = +25°C unless otherwise specified)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

5.0

4.1

t<10s

TA = +25°C

TA = +70°C

6.6

5.3

Maximum Body Diode Forward Current (Note 6)

2.5

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

IDM

Pulsed Body Diode Forward Current (10

μs Pulse, Duty Cycle = 1%)

ISM

Avalanche Current (Note 7) L = 0.1mH

IAS

14.2

Avalanche Energy (Note 7) L = 0.1mH

EAS

Thermal Characteristics (@TA = +25°C unless otherwise specified)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

1.3

TA = +70°C

0.8

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

102

°C/W

t<10s

Total Power Dissipation (Note 6)

TA = +25°C

1.7

TA = +70°C

1.1

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 6)

RθJC

14.5

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = 25°C unless otherwise specified)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS



VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS



100

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS



100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)



VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)



Ω

VGS = 10V, ID = 4.5A



VGS = 4.5V, ID = 3.5A

Forward Transfer Admittance

|YFS|



4.5



VDS = 10V, ID = 4.3A

Diode Forward Voltage

VSD



0.7

1.2

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

CISS



1,287



VDS = 25V, VGS = 0V

f = 1.0MHz

Output Capacitance

COSS



Reverse Transfer Capacitance

CRSS



Gate Resistance



1.2



Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 10V)



22.4





VDS = 30V, ID = 4.3A

Total Gate Charge (VGS = 4.5V)



10.4



Gate-Source Charge

QGS



4.9



Gate-Drain Charge

QGD



3.0



Turn-On Delay Time

tD(ON)



6.6



VGS = 10V, VDD = 30V, RG = 6Ω,

ID = 4.3A

Turn-On Rise Time



8.1



Turn-Off Delay Time

tD(OFF)



20.1



Turn-Off Fall Time



4.0



Body Diode Reverse Recovery Time

tRR



IS = 4.3A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR



11.9



IS = 4.3A, di/dt = 100A/µs

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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