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MMBTA06 数据表(PDF) 2 Page - Diotec Semiconductor |
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MMBTA06 数据表(HTML) 2 Page - Diotec Semiconductor |
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2 / 2 page ![]() MMBTA06 Characteristics Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 80 V ICBO – – 100 nA Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 4 V IEBO – – 100 nA Collector saturation voltage – Kollektor-Sättigungsspannung 1) IC = 100 mA, IB = 10 mA VCEsat – – 250 mV Base saturation voltage – Basis-Sättigungsspannung 1) IC = 100 mA, IB = 10 mA VBEsat – – 1.2 V Gain-Bandwidth Product – Transitfrequenz VCE = 2 V, IC = 10 mA, f = 100 MHz fT 100 MHz – – Thermal resistance junction – ambient Wärmewiderstand Sperrschicht – Umgebung RthA < 420 K/W 2) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG [%] P tot 120 100 80 60 40 20 0 [°C] T A 150 100 50 0 Power dissipation versus ambient temperature ) 2 Verlustleistung in Abh. von d. Umgebungstemp. ) 2 |
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