EMIF06-MSD04F3 datasheet(3/9 Pages) STMICROELECTRONICS

部件名	EMIF06-MSD04F3

功能描述	6-line low capacitance IPAD™ for micro-SD cardwith EMI filtering and ESD protection

PDF	9 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 9 page

EMIF06-MSD04F3

Characteristics

Doc ID 018849 Rev 1

3/9

Table 3.

Electrical characteristic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VBR

Breakdown voltage

IR = 1 mA

IRM

Leakage current at VRM

VRM = 3 V

0.1

µA

R1, R2, R3,

R4, R5, R6

Serial resistance

Tolerance ±10 %, matching ±2 %

R7, R8, R9,

R10, R11

Pull-up resistance

Tolerance ±20 %, matching ±2 %

Cline

Data line capacitance

V = 1.8 V, F = 10 MHz, VOSC = 30 mV

7.5

V = 2.9 V, F = 10 MHz, VOSC = 30 mV

Cut-off frequency

S21 = -3 dB

550

MHz

tR,tF

Rise and fall time

Cload = 10 pF, low-ref = 0.58 V,

high-ref = 1.27 V

0.98

Figure 3.

S21 attenuation measurements

Figure 4.

Analog crosstalk measurements

100k

10M

100M

-30

-25

-20

-15

-10

-5

Clk

Dat0

Dat1

Dat2

Dat3

Cmd

F (Hz)

S21 (dB)

100k

10M

100M

-110

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

Clk-Dat0

Dat3-SDDat0

F (Hz)

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