LX5512BLQ datasheet(2/6 Pages) MICROSEMI

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LX5512B

PRODUCTION DATA SHEET

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 2

Rev. 1.0, 2004-06-23

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

ABSOLUTE MAXIMUM RATINGS

DC Supply Voltage, RF off......................................................................................................7V

Collector Current..............................................................................................................500mA

Total Power Dissipation .........................................................................................................2W

RF Input Power ..................................................................................................................5dBm

Operation Ambient Temperature ............................................................................ -40 to +85

Storage Temperature............................................................................................ -60 to +150

Package Peak Temp for Solder Reflow (40 Seconds Maximum Exposure)..........255°C(+5, -0)

Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to

Ground. Currents are positive into, negative out of specified terminal

TH ERMAL DATA

LQ Plastic MLPQ 16-Pin

THERMAL RESISTANCE

-JUNCTION TO CASE,

θJC

°C/W

THERMAL RESISTANCE

-JUNCTION TO AMBIENT,

θJA

°C/W

Junction Temperature Calculation: TJ = TA + (PD x θJA).

The θJA numbers are guidelines for the thermal performance of the device/pc-board system. All of the

above assume no ambient airflow.

PACKAGE PIN OUT

VC3

RF OUT

DET

N/C

RF IN

N/C

LQ PACKAGE

(Bottom View)

Pb-free 100% Matte Tin Lead Finish

FUNCTIONAL PIN DESCRIPTION

Name

Description

RF IN

RF input for the power amplifier. This pin is directly connected to base, a 10pF decoupling capacitor may be

needed.

VB12

Bias current control voltage for the first and second stage.

VB3

Bias current control voltage for the third stage. The VB3 pin can be connected with the first and second stage

control voltage (VB12) into a single reference voltage (referred to as VREF) through an external resistor bridge.

VCC

Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 10nF

bypass capacitor close to connector pin. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a

single supply voltage (referred to as VC).

RF OUT

RF output for the power amplifier. This pin is DC-decoupled from the transistor collector of the third stage.

VC1

Power supply for first stage amplifier. The VC1 feed line should be terminated with a 10pF bypass capacitor,

followed by a 36 Ohm resistor. This pin can be combined with VC2,VC3 and VCC pins, resulting in a single

supply voltage (referred to as VC).

VC2

Power supply for second stage amplifier. The VC2 feed line should be terminated with a 18pF bypass capacitor.

This pin can be combined with VC1,VC3 and VCC pins, resulting in a single supply voltage (referred to as VC).

VC3

Power supply for the third stage amplifier. The VC3 feed line should be terminated with 27 pF and 10 nF bypass

capacitors. This pin can be combined with VC1,VC2 and VCC pins, resulting in a single supply voltage (referred

to as VC).

REF

Power detector reference output pin should be terminated with a

Ω

100K

loading resistor

DET

Power detector output pin should be terminated with a

Ω

100K loading resistor

GND

The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power

amplifier.

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