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S16ASD2 数据表(PDF) 2 Page - Diotec Semiconductor |
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S16ASD2 数据表(HTML) 2 Page - Diotec Semiconductor |
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2 / 2 page ![]() S16ASD2 ... S16MSD2 Characteristics Kennwerte Type Typ Forward voltage Durchlass-Spannung Forward voltage Durchlass-Spannung VF [V] 1) @ IF [A] @ Tj VF [V] 1) @ IF [A] @ Tj S16ASD2 ... S16MSD2 < 1.0 5 25°C < 1.1 8 25°C Leakage current Sperrstrom Tj = 25°C VR = VRRM IR < 5 µA 1) Typical junction capacitance Typische Sperrschichtkapazität VR = 4 V Cj 40 pF 1) Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse RthC < 2.5 K/W 1,2) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Per diode – Pro Diode 2 Measured at heat flange – Gemessen an der Kühlfahne 2 http://www.diotec.com/ © Diotec Semiconductor AG Rated forward current vs. temp. of the case in Abh. v. d. Gehäusetemperatur Zul. Richtstrom 120 100 80 60 40 20 0 I FAV [%] [°C] T C 150 100 50 0 10 10 1 10 10 2 -1 -2 [A] I F Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 0.4 V F 0.8 1.0 1.2 1.4 [V] 1.8 T = 25°C j T = 125°C j 200a-(5a-0.95v) |
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