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OP913 数据表(PDF) 2 Page - TT Electronics.

部件名 OP913
功能描述  PIN Silicon Photodiode
PDF  3 Pages
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制造商  TTELEC [TT Electronics.]
网页  http://www.ttelectronics.com/
标志 TTELEC - TT Electronics.

OP913 数据表(HTML) 2 Page - TT Electronics.

  OP913 Datasheet HTML 1Page - TT Electronics. OP913 Datasheet HTML 2Page - TT Electronics. OP913 Datasheet HTML 3Page - TT Electronics.  
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© TT electronics plc
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
PIN Silicon Photodiode
OP913 Series
Issue A
08/2016
Page 2
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Storage Temperature Range
-65°C to +150°C
Operating Temperature Range
-65°C to +125°C
Reverse Voltage
32 V
Lead Soldering Temperature [ 1/16 inch (1.6 mm) from the case for 5 seconds with soldering
iron]
260°C(1)
Power Dissipation
150 mW(2)
Electrical Specifications
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
IL
Reverse Light Current:
OP913SL
OP913WSL
120
40
-
-
-
-
μA
VR = 5 V, EE = 5 mW/cm
2 (3)(4)
ID
Reverse Dark Current
-
-
25
nA
VR = 10 V, EE = 0
(3)
VCC
Open Circuit Voltage:
OP913SL
OP913WSL
-
-
400
300
-
-
mW
EE = 5 mW/cm
2(4)
ISC
Short Circuit Current:
OP913SL
OP913WSL
120
40
-
-
-
-
V
EE = 5 mW/cm
2(4)
VBR
Reverse Breakdown Voltage
32
-
-
V
EE = 100 µA
CT
Total Capacitance
-
-
150
pF
VR = 0, EE = 0, F = 1 MHz
tON, tOFF
Turn On / Turn Off Time
-
50
-
ns
VR = 10 V, RL = 1 kΩ
Notes:
(1)
RMA flux is recommended. Dura on can be extended to a maximum of 10 seconds when flow soldering.
(2)
Derate linearly 1.5 mW/° C above 25° C.
(3)
Junc on temperature for all devices in this data sheet is maintained at 25° C.
(4)
Light source is an unfiltered tungsten bulb opera ng at CT = 2870 K or equivalent infrared source.
(5)
At any par cular wavelength the flux responsively, Rθ is related to quantum efficiency by: Rθ = ηq (λ/1240), where ηq is the quantum
efficiency in electrons per photon and λ is the wavelength in nanometers; thus at 900 nm, 0.60 A/W corresponds to a quantum efficiency
of 83%.
(6)
NEP is the radiant flux at a specified wavelength, required for unity signal-to-noise ra o normalized for bandwidth. NEP calcula on is made
using responsivity at peak sensi vity wavelength, with spot noise measurement at 1000 Hz in a noise bandwidth of 6 Hz. (λ, f, ∆ f) = (λp,
1000 Hz, 6 Hz).



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