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USBULC6-2F4 数据表(PDF) 1 Page - STMicroelectronics |
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USBULC6-2F4 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 8 page ![]() This is information on a product in full production. December 2013 DocID025277 Rev 1 1/8 USBULC6-2F4 2-line, ultralow capacitance protection in 0.3 mm pitch Datasheet - production data Features Ultralow capacitance diode (1.5 pF max) 0.3 mm pitch Two data lines (D+ and D-) protected against ESD Breakdown voltage VBR = 6.0 V min. Flip Chip, 300 µm pitch, lead-free Very low leakage current Very small PCB area RoHS compliant Benefits Minimized impact on rise and fall times for maximum data integrity Low PCB space occupation Higher reliability offered by monolithic integration Complies with the following standards IEC 61000-4-2 level 4: – ±15 kV (air discharge) – ±8 kV (contact discharge) Description The USBULC6-2F4 is a monolithic, application specific discrete device dedicated to ESD protection of high speed interfaces. Its ultralow line capacitance secures a high level of signal integrity without compromising the protection of downstream sensitive chips against the most stringently characterized ESD strikes. Figure 1. Pin layout (bump side) Figure 2. Device configuration Flip Chip USBULC6-2F4 (4 bumps) B 1 2 A A2 A1 B2 B1 Note: B1 and B2 bumps must be grounded on the PCB together www.st.com |
类似零件编号 - USBULC6-2F4 |
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类似说明 - USBULC6-2F4 |
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