IPD60R650CE datasheet(1/2 Pages) ISC

部件名	IPD60R650CE

功能描述	N-Channel MOSFET Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

IPD60R650CE,IIPD60R650CE

·

FEATURES

·

Static drain-source on-resistance:

RDS(on)≤0.65Ω

·

Enhancement mode:

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·

DESCRITION

·

Fast switching

·

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

600

V

VGS

Gate-Source Voltage

±

20

V

ID

Drain Current-Continuous

9.9

A

IDM

Drain Current-Single Pulsed

19

A

PD

Total Dissipation @TC=25℃

82

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-40~150

℃

·

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth(j-c)

Channel-to-case thermal resistance

1.52

℃

/W

Rth(j-a)

Channel-to-ambient thermal resistance

62

℃

/W

类似零件编号 - IPD60R650CE

制造商	部件名	数据表	功能描述
Infineon Technologies A...	IPD60R650CE	1Mb / 17P	600V CoolMOS™ CE Power Transistor Rev. 2.0, 2014-09-25
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