TPV387 datasheet(1/2 Pages) ASI

部件名	TPV387

功能描述	NPN SILICON RF POWER TRANSISTOR

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制造商	ASI [Advanced Semiconductor]

网页	http://www.advancedsemiconductor.com

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS T

C = 25

OC

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCEO

IC = 100 mA

35

V

BVCER

IC = 100 mA

RBE = 10

Ω

60

V

BVCBO

IC = 50 mA

65

V

BVEBO

IE = 20 mA

4.0

V

hFE

VCE = 5.0 V

IC = 1.0 A

20

100

---

Cob

VCB = 30 V

f = 1.0 MHz

130

150

pF

GPE

VCC = 28 V

Pout = 24 W

f = 225 MHz

13

dB

ψ

VCC = 28 V

ALL PHASEANGLES

f = 225 MHz

Pout = 24 W

LOAD

VSWR =

∝:1

NO DEGRADATION IN OUTPUT POWER

IMD1

VCE = 28 V

Pref = 24 W

f = 225 MHz

VISION CARRIER

= -8 dB

SOUND CARRIER

= -7 dB

SIDEBAND SIGNAL

= -16 dB

IE = 3.5 A

-50

dB

Po1dB

VCC = 28 V

IQ = 200 mA

f = 225 MHz

90

W

NPN SILICON RF POWER TRANSISTOR

TPV387

DESCRIPTION:

The

TPV387 is Designed for

Operation in Band III TV Transposers

and Transmitter Amplifiers from

170 to 230 MHz.

FEATURES INCLUDE:

•• Gold Metalization

• Emitter Ballast Resistors

• Internal Input Matching

•

Common Emitter

MAXIMUM RATINGS

IC

16 A (CONT)

VCE

35 V

TJ

-65

OC to +200 OC

TSTG

-65

OC to +200 OC

θθ

JC

1.0

OC/W

PACKAGE STYLE 500 6L FLG

1 = COLLECTOR

2 = BASE

3 & 4 = EMITTER

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