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ACE7203B 数据表(PDF) 1 Page - ACE Technology Co., LTD.

部件名 ACE7203B
功能描述  P-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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制造商  ACE [ACE Technology Co., LTD.]
网页  http://www.ace-ele.com
标志 ACE - ACE Technology Co., LTD.

ACE7203B 数据表(HTML) 1 Page - ACE Technology Co., LTD.

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ACE7203B
P-Channel Enhancement Mode Power MOSFET
VER 1.1
1
Description
ACE7203B uses advanced trench technology and design to provide excellent RDS(ON) with low gate
charge. It can be used in a wide variety of applications.
Features
VDS=-20V, ID=-95A
RDS(ON)1@VGS=-10V, TYP 1.7mΩ
RDS(ON)1@VGS=-4.5V, TYP 2.0mΩ
RDS(ON)1@VGS=-4.5V, TYP 2.7mΩ
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
Drain Current (Continuous)*AC
TA=25℃
ID
-95
A
TA=100℃
-60
Drain Current (Pulsed)*B
IDM
-200
A
Power Dissipation
TA=25℃
PD
45
W
Operating temperature / storage temperature
TJ/TSTG
-55~150
℃
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Packaging Type
DFN5*6-EP


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