ACE7701A datasheet(3/6 Pages) ACE

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ACE7701A

P-Channel Enhancement Mode MOSFET

VER 1.1

Electrical Characteristics

TA=25℃, unless otherwise noted.

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250 uA

-60

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-1

-3

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

±10

Zero Gate Voltage Drain Current

IDSS

VDS=-60V, VGS=0V

-1

VDS=-60V, VGS=0V, TJ=55℃

-10

On-State Drain Current

ID(on)

VDS≦-5V,VGS=-10V

-1

Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-0.5A

VGS=-4.5V, ID=-0.25A

Forward Trans Conductance

gfs

VDS=-10V, ID=-0.5A

Diode Forward Voltage

VSD

VGS=0V, IS=-0.2A

-1.5

Dynamic

Total Gate Charge

VDD=-30V, VGS=-15V, ID≡-0.5A

Gate-Source Charge

Qgs

0.53

Gate-Drain Charge

Qgd

0.72

Input Capacitance

Ciss

VDS =-25 V, f = 1 MHz, VGS = 0V

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

7.3

Turn-On Time

td(on)

VDD=-25V, ID≡-200mA, VGEN=-10V

Turn-Off Time

td(off)

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