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ACE13402M 数据表(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE13402M 数据表(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page ![]() ACE13402M N-Channel 30-V (D-S) MOSFET VER 1.1 1 Features Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications DC/DC Conversion Power Routing Motor Drives Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current a TA=25 OC ID 7.1 A TA=70 OC 5.7 Pulse Drain Current b IDM 30 Continuous Drain Current (Diode Continuous) a IS 2.9 A Power Dissipation a TA=25 OC PD 2 W TA=70 OC 1.3 Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150 OC Parameter Symbol Maximum Units Maximum Junction-to-Ambient a t≦10sec RθJA 62.5 ℃/W Steady State 110 ℃/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Packaging Type Ordering information SOT-23-6 ACE13402M XX + H PRODUCT SUMMARY VDS (V) rDS (on) (mΩ) ID(A) 30 27@ VGS = 10V 7.1 35@ VGS = 4.5V 6.2 GM: SOT-23-6 Pb - free Halogen - free |
类似零件编号 - ACE13402M |
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类似说明 - ACE13402M |
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