2003 Oct 08

2

Philips Semiconductors

Product specification

NPN/PNP resistor-equipped transistors;

R1 = 4.7 k

Ω, R2 = 47 kΩ

PEMD13; PUMD13

FEATURES

• Built-in bias resistors

• Simplified circuit design

• Reduction of component count

• Reduced pick and place costs.

APPLICATIONS

• Low current peripheral driver

• Replacement of general purpose transistors in digital

applications

• Control of IC inputs.

QUICK REFERENCE DATA

DESCRIPTION

NPN/PNP resistor-equipped transistors (see “Simplified

outline, symbol and pinning” for package details).

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

collector-emitter

voltage

−

50

V

output current (DC)

−

100

mA

TR1

NPN

−−−

TR2

PNP

−−−

R1

bias resistor

4.7

−

k

Ω

R2

bias resistor

47

−

k

Ω

PRODUCT OVERVIEW

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

TYPE

NUMBER

PACKAGE

MARKING CODE

PNP/PNP

COMPLEMENT

NPN/NPN

COMPLEMENT

PHILIPS

EIAJ

PEMD13

SOT666

Z1

PEMB13

PEMH13

PUMD13

SOT363

SC-88

PUMB13

PUMH13

SIMPLIFIED OUTLINE, SYMBOL AND PINNING

TYPE NUMBER

SIMPLIFIED OUTLINE AND SYMBOL

PINNING

PIN

DESCRIPTION

PEMD13

1

emitter TR1

PUMD13

2

base TR1

3

collector TR2

4

emitter TR2

5

base TR2

6

collector TR1

12

3

4

6

5

Top view

65

4

12

3

R2

TR1

TR2

R1

R1

R2

MAM468