SFH4232 datasheet(2/13 Pages) OSRAM

2 / 13 page

2015-12-01

Version 1.4

SFH 4232

Maximum Ratings (TA = 25 °C)

Characteristics (TA = 25 °C)

Parameter

Symbol

Values

Unit

Operation and storage temperature range

op; Tstg

-40 ... 125

°C

Junction temperature

145

°C

Reverse voltage

Forward current

1000

Surge current

(tp ≤ 200 µs, D = 0)

FSM

Power consumption

Ptot

1800

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

VESD

Thermal resistance junction - soldering point

RthJS

K / W

Parameter

Symbol

Values

Unit

Peak wavelength

F = 1 A, tp = 10 ms)

peak

860

Centroid wavelength

(IF = 1 A, tp = 10 ms)

centroid

850

Spectral bandwidth at 50% of Imax

(IF = 1 A, tp = 10 ms)

∆λ

Half angle

± 60

Dimensions of active chip area

L x W

1 x 1

mm x

Rise and fall times of I

e ( 10% and 90% of Ie max)

F = 5 A, RL = 50 Ω)

r / tf

7 / 14

Forward voltage

(IF = 1 A, tp = 100 µs)

1.5 (≤ 1.8)

Forward voltage

(IF = 5 A, tp = 100 µs)

2 (≤ 2.9)

Radiant intensity

F = 1 A, tp = 100 µs)

e, typ

180

mW/sr

Temperature coefficient of I

e or Φe

F = 1 A, tp = 10 ms)

-0.3

% / K

Temperature coefficient of VF

(IF = 1 A, tp = 10 ms)

TCV

-1

mV / K

Temperature coefficient of wavelength

(IF = 1 A, tp = 10 ms)

TCλ,

centroid

0.3

nm / K

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