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SFH4250-R2S 数据表(PDF) 2 Page - OSRAM GmbH |
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SFH4250-R2S 数据表(HTML) 2 Page - OSRAM GmbH |
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2 / 13 page ![]() 2016-11-24 2 Version 1.6 SFH 4250 Maximum Ratings (TA = 25 °C) Characteristics (T A = 25 °C) Parameter Symbol Values Unit Operation and storage temperature range T op; Tstg -40 ... 100 °C Reverse voltage V R 5 V Forward current I F 100 mA Surge current (t p = 100 µs, D = 0) I FSM 1 A Power consumption Ptot 180 mW ESD withstand voltage (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) VESD 2 kV Thermal resistance junction - ambient 1) page 12 RthJA 300 K / W Thermal resistance junction - soldering point 2) page 12 RthJS 140 K / W Parameter Symbol Values Unit Peak wavelength (IF = 100 mA, tp = 20 ms) (typ) λ peak 860 nm Centroid wavelength (IF = 100 mA, tp = 20 ms) (typ) λcentroid 850 nm Spectral bandwidth at 50% of Imax (IF = 100 mA, tp = 20 ms) (typ) ∆λ 30 nm Half angle (typ) ϕ ± 60 ° Dimensions of active chip area (typ) L x W 0.3 x 0.3 mm x mm Rise and fall time of I e ( 10% and 90% of Ie max) (IF = 100 mA, RL = 50 Ω) (typ) t r, tf 12 ns Forward voltage (IF = 100 mA, tp = 20 ms) (typ (max)) VF 1.5 (≤ 1.8) V Forward voltage (I F = 1 A, tp = 100 µs) (typ (max)) VF 2.4 (≤ 3) V Reverse current (V R = 5 V) I R not designed for reverse operation µA Total radiant flux (IF = 100 mA, tp = 20 ms) (typ) Φ e 60 mW |
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