Transistors

1

Publication date: December 2002

SJC00285BED

2SC5813

Silicon NPN epitaxial planar type

For DC-DC converter

■ Features

• Low collector-emitter saturation voltage V

CE(sat)

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

80

V

Collector-emitter voltage (Base open)

80

V

Emitter-base voltage (Collector open)

5V

Collector current

1.5

A

Peak collector current

3A

600

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

= 10 µA, I

E

= 080

V

Collector-emitter voltage (Base open)

V

Emitter-base voltage (Collector open)

V

Collector-base cutoff current (Emitter open)

= 40 V, I

E

= 0

0.1

µA

200



350

500

mV

Transition frequency

= 10 V, I

E

= −50 mA, f = 200 MHz

180

MHz

Collector output capacitance

15

25

pF

(Common base, input open circuited)

■ Electrical Characteristics T

a

= 25°C ± 3°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Pulse measurement

Unit: mm

0.40

+0.10

–0.05

2

1

3

(0.95) (0.95)

2.90

+0.20

–0.05

0.16

+0.10

–0.06

10˚

1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

Marking Symbol: 5H

Note) *: Measure on the ceramic substrate at 15 mm

× 15 mm × 0.6 mm