SFH4735 datasheet(2/13 Pages) OSRAM

2 / 13 page

2017-02-21

Version 1.1

SFH 4735

Maximum Ratings (TA = 25 °C)

Characteristics (T

A = 25 °C)

Parameter

Symbol

Values

Unit

Operation and storage temperature range

op; Tstg

-40 ... 85

°C

Junction temperature

125

°C

Forward current

500

Surge current

p ≤ 1 ms, D = 0)

FSM

Power consumption

Ptot

1900

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

VESD

Thermal resistance junction - soldering point

RthJS

K / W

Note:

For the forward current and power consumption please see "maximum permissible forward current" diagram

Parameter

Symbol

Values

Unit

Half angle

(typ)

± 60

Forward voltage

(IF = 350 mA, tp = 20 ms)

(typ (max)) VF

2.95 (≤ 3.5)

Forward voltage

F = 500 mA, tp = 100 µs)

(typ (max)) VF

3 (≤ 3.8)

Reverse current

R = 5 V)

not designed for

reverse operation

µA

Radiant intensity

(IF = 350 mA, tp=20 ms, λ = 350 - 600nm)

e, typ

mW/sr

Radiant intensity

(IF = 350 mA, tp=20 ms, λ = 600 - 1050nm)

Ie, typ

mW/sr

Total radiant flux

F = 350 mA, tp=20 ms, λ = 350 - 600nm)

(typ)

Φe

184

Total radiant flux

F = 350 mA, tp=20 ms, λ = 600 - 1050nm)

(typ)

Spectral flux

(IF = 350 mA, tp = 20 ms, λ = 750 nm)

(typ)

e, λ

µW/nm

Spectral flux

(IF = 350 mA, tp = 20 ms, λ = 850 nm)

(typ)

Φe, λ

µW/nm

Spectral flux

F = 350 mA, tp = 20 ms, λ = 950 nm)

(typ)

Φe, λ

µW/nm

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