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2SB1073-R 数据表(PDF) 1 Page - Micro Commercial Components |
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2SB1073-R 数据表(HTML) 1 Page - Micro Commercial Components |
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1 / 3 page ![]() 2SB1073-Q Silicon PNP epitaxial planer Transistors Features • Low collector to emitter saturation voltage VCE(sat) • Large peak collector current ICP • Mini power type package Maximum Ratings @ 25OC Unless Otherwise Specified Symbol Rating Rating Unit VCEO Collector-Emitter Voltage -20 V VCBO Collector-Base Voltage -30 V VEBO Emitter-Base Voltage -7 V ICP Peak Collector Current -7 A IC Collector Current -4 A PC Collector Dissipation 1 W TJ Operating Junction Temperature 150 TSTG Storage Temperature -55 to +150 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Typ Max Units V(BR)CEO Collector-Emitter Breakdown Voltage (IC=-1mAdc, IB=0) -20 --- --- Vdc V(BR)CBO Collector-Base Breakdown Voltage (IC=-10uAdc, IE=0) -30 --- --- Vdc V(BR)EBO Collector-Emitter Breakdown Voltage (IE=-10uAdc, IC=0) -7 --- --- Vdc ICBO Collector Cutoff Current (VCB=-30Vdc, IE=0Vdc) --- --- -100 nAdc IEBO Emitter Cutoff Current (VEB=-7Vdc, IC=0Vdc) --- --- -100 nAdc hFE DC Current Gain (note 1) (IC=-2Adc, VCE=-2Vdc) (note 2) 120 --- 315 --- VCE(sat) Collector-Emitter Saturation Voltage (IC=-3Adc, IB=-0.1Adc) (note 2) --- -0.6 -1 Vdc fT Current Gain-Bandwidth Product (VCB=-6Vdc, IE=-50mAdc, f=200MHz) --- 120 --- MHz Cob Output Capacitance (VCB=-20Vdc, f=1.0MHz, IE=0) --- 40 --- pF Note: 1. hFE Rank Classification Rank Q R hFE 120~205 180~315 Marking Symbol IQ IR 2. Pulse measurement Revision: B 2013/01/01 25 SOT-89 omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC 1.BASE 2.COLLECTOR 3.EMITTER TM Micro Commercial Components www.mccsemi.com 1 of 3 B A E D G H F K J C 1 2 3 2SB1073-R • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Halogen free available upon request by adding suffix "-HF" • |
类似零件编号 - 2SB1073-R |
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类似说明 - 2SB1073-R |
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