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DG3003DB 数据表(PDF) 2 Page - Vishay Siliconix |
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DG3003DB 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page ![]() DG3001/3002/3003 Vishay Siliconix New Product www.vishay.com 2 Document Number: 72505 S-32069—Rev. A, 27-Oct-03 ABSOLUTE MAXIMUM RATINGS Reference to GND V+ -0.3 to +6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IN, COM, NC, NOa -0.3 to (V+ + 0.3 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Current (NO, NC, COM) "250 mA . . . . . . . . . . . . . . . . . . . . . . . . Peak Current "400 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) -65 to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Reflow Conditionsb VPR 215°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IR/Convection 220°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation (Packages)c 6-Bump, 2 x 3 MICRO FOOTd 250 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes: a Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b Refer to IPC/JEDEC (J-STD-020A) c All bumps soldered to PC Board. d Derate 3.1 mW/_C above 70_C SPECIFICATIONS (V+ = 3.0 V) Test Conditions Otherwise Unless Specified Limits −40 to 85_C Parameter Symbol V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve Tempa Minb Typc Maxb Unit Analog Switch Analog Signal Ranged VNO, VNC, VCOM Full 0 V+ V On-Resistanced rON V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA Room Full 0.4 0.7 0.8 rON Flatnessd rON Flatness V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA Room 0.1 0.2 W rON Matchd DrON V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA Room 0.01 0.05 Switch Off Leakage Currentf INO(off), INC(off) V+ = 3.3 V Room Full 1 −10 1 10 Switch Off Leakage Currentf ICOM(off) V+ = 3.3 V VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V Room Full 1 −10 1 10 nA Channel-On Leakage Currentf ICOM(on) V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V Room Full 1 −10 1 10 Digital Control Input High Voltage VINH Full 2 V Input Low Voltage VINL Full 0.4 V Input Capacitanced Cin Full 5 pF Input Currentd IINL or IINH VIN = 0 or V+ Full −1 1 mA Dynamic Characteristics Turn-On Timed tON V or V 20 V R 300 W C 35 pF Room Full 47 71 Turn-Off Timed tOFF VNO or VNC = 2.0 V, RL = 300 W, CL = 35 pF Figure 1 and 2 Room Full 40 59 ns Break-Before-Make Timed td Room 1 6 Charge Injectiond QINJ CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 Room 64 pC Off-Isolationd OIRR RL = 50 W CL = 5 pF f = 100 kHz Room −70 dB Crosstalkd XTALK RL = 50 W, CL = 5 pF, f = 100 kHz Room −70 dB NO, NC Off Capacitanced CNO(off), CNC(off) VIN = 0 or V+, f = 1 MHz Room 100 pF Channel-On Capacitanced CON VIN = 0 or V+, f = 1 MHz Room 340 pF Power Supply Power Supply Range V+ 2.7 3.3 V Power Supply Currentd I+ VIN = 0 or V+ 0.1 1.0 mA Notes: a. Room = 25°C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. |
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