W256

..........................Document #: 38-07256 Rev. *C Page 4 of 7

Maximum Ratings

Supply Voltage to Ground Potential..................–0.5 to +7.0V

Storage Temperature .................................. –65°C to +150°C

Static Discharge Voltage............................................>2000V

(per MIL-STD-883, Method 3015)

Operating Conditions[2]

Parameter

Description

Min.

Typ.

Max.

Unit

Supply Voltage

3.135

3.465

V

Supply Voltage

2.375

2.625

V

Operating Temperature (Ambient Temperature)

0

70

°C

Output Capacitance

6

pF

Input Capacitance

5

pF

Parameter

Description

Test Conditions

Min.

Typ.

Max.

Unit

Input LOW Voltage

For all pins except SMBus

0.8

V

Input HIGH Voltage

2.0

V

Input LOW Current

50

A

Input HIGH Current

50

A

Output HIGH Current

–18

–32

mA

Output LOW Current

26

35

mA

Output LOW Voltage[3]

0.6

V

Output HIGH Voltage[3]

1.7

V

Supply Current[3]

(DDR-Only mode)

Unloaded outputs, 133 MHz

400

mA

Supply Current

(DDR-Only mode)

Loaded outputs, 133 MHz

500

mA

Supply Current

PWR_DWN# = 0

100

A

Output Voltage Swing

See Test Circuity (Refer to

Figure 1)

0.7

V

Output Crossing Voltage

–0.1

+0.1

V

Input Clock Duty Cycle

48

52

%

Notes:

2. Multiple Supplies: The voltage on any input or I/O pin cannot exceed the power pin during power-up. Power supply sequencing is NOT required.

3. Parameter is guaranteed by design and characterization. Not 100% tested in production.

Switching Characteristics[4]

Parameter

Name

Test Conditions

Min.

Typ.

Max.

Unit

–

Operating Frequency

66

180

MHz

–

Measured at 1.4V for 3.3V outputs

Measured at VDD/2 for 2.5V outputs.

–5%

%

SDRAM Rising Edge Rate[4]

Measured between 0.4V and 2.4V

1.0

2.50

V/ns

SDRAM Falling Edge Rate[4]

Measured between 2.4V and 0.4V

1.0

2.50

V/ns