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BD882-R 数据表(PDF) 1 Page - Micro Commercial Components |
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BD882-R 数据表(HTML) 1 Page - Micro Commercial Components |
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1 / 3 page ![]() Silicon NPN epitaxial planer Transistors Features VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A PC Collector Dissipation 0.5 W TJ Operating Junction Temperature 150 TSTG Storage Temperature -55 to +150 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Typ Max Units V(BR)CEO Collector-Emitter Breakdown Voltage (IC=10mAdc, IB=0) 30 --- --- Vdc V(BR)CBO Collector-Base Breakdown Voltage (IC=100 µAdc, I E=0) 40 --- --- Vdc V(BR)EBO Collector-Emitter Breakdown Voltage (IE=100 µAdc, I C=0) 6 --- --- Vdc ICBO Collector Cutoff Current (VCB=40Vdc, IE=0) --- --- 1 µAdc IEBO Emitter Cutoff Current (VEB=6Vdc, IC=0) --- --- 1 µAdc hFE DC Current Gain (IC=1Adc, VCE=2Vdc) 60 ---- 400 VCE(sat) Collector-Emitter Saturation Voltage (IC=2Adc, IB=0.2Adc) --- ---- 0.5 Vdc ft Transition frequency (VCE=5Vdc, f=10MHz, IC=0.1A) 50 --- --- MHz Revision: B 20 13/01/01 omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC TM Micro Commercial Components www.mccsemi.com 1 of 3 VBE(sat) Base-Emitter Saturation Voltage (IC=2Adc, IB=0.2Adc) --- ---- 1.5 Vdc Maximum Ratings @ 25OC Unless Otherwise Specified Symbol Rating Rating Unit ICEO Collector Cutoff Current (VCB=30Vdc, IB=0) --- --- 10 µAdc CLASSIFICATION OF hFE Rank Range R O YGR 60-120 100-200 160-320 200-400 BD882-R BD882-O BD882-Y BD882-GR SOT-89 1. BASE 2. COLLETOR 3. EMITTER B A E D G H F K J C 12 3 25 1.55 .061 REF. • Marking: D882 • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Halogen free available upon request by adding suffix "-HF" • |
类似零件编号 - BD882-R |
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类似说明 - BD882-R |
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