AL8806

Document number: DS35144 Rev. 5 - 2

3 of 15

www.diodes.com

July 2013

© Diodes Incorporated

AL8806

Symbol

Parameter

Ratings

Unit

ESD HBM

Human Body Model ESD Protection

2.5

kV

ESD MM

Machine Model ESD Protection

200

V

-0.3 to +40

V

SW voltage relative to GND

-0.3 to +40

V

CTRL pin input voltage

-0.3 to +6

V

DC or RMS switch current

1.65

A

Peak switch current (<10%)

3

A

Junction Temperature

150

°C

Lead Temperature Soldering

300

°C

Storage Temperature Range

-65 to +150

°C

Caution:

Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be

affected by exposure to absolute maximum rating conditions for extended periods of time.

Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling

and transporting these devices.

Symbol

Parameter

Min

Max

Unit

Operating Input Voltage relative to GND

6.0

36

V

Voltage High for PWM dimming relative to GND

2.6

5.5

V

Voltage range for 20% to 100% DC dimming relative to GND

0.5

2.5

V

Voltage Low for PWM dimming relative to GND

0

0.4

V

DC or RMS switch current

1.5

A

Switching Frequency

1

MHz

Junction Temperature Range

-40

+125

°C

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Internal regulator start up threshold

5.9

V

Internal regulator hysteresis threshold

100

300

mV

Quiescent current

Output not switching (Note 4)

350

µA

Input supply Current

CTRL pin floating f = 250kHz

1.8

5

mA

Set current Threshold Voltage

95

100

105

mV

Set threshold hysteresis

±20

mV

SET pin input current

16

22

µA

CTRL pin input resistance

Referred to internal reference

50

k

Ω

Internal Reference Voltage

2.5

V

On Resistance of SW MOSFET

0.18

0.35

Ω

Switch leakage current

0.5

μA

Thermal Resistance Junction-to-Ambient (Note 5)

MSOP-8EP (Note 6)

69

C/W

Thermal Resistance Junction-to-Case (Note 5)

MSOP-8EP (Note 6)

4.3

Notes:

5. Dominant conduction path via exposed pad. Refer to figure 5 for the device derating curve.

6. Measured on an FR4 51x51mm PCB with 2oz copper standing in still air with minimum recommended pad layout on top layer and thermal vias to

bottom layer maximum area ground plane. For better thermal performance, larger copper pad for heat-sink is needed.