DMTH10H015LK3 datasheet(2/7 Pages) DIODES

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DMTH10H015LK3

Document number: DS38735 Rev. 5 - 2

2 of 7

www.diodes.com

June 2017

DMTH10H015LK3

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

100

Gate-Source Voltage

VGSS

±20

Continuous Drain Current, VGS = 10V

TC = +25°C

TC = +100°C

52.5

37.1

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

150

Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)

ISM

150

Maximum Continuous Body Diode Forward Current (Note 6)

2.6

Avalanche Current, L = 3mH

IAS

7.5

Avalanche Energy, L = 3mH

EAS

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

2.1

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

°C/W

Total Power Dissipation (Note 6)

3.5

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

°C/W

Thermal Resistance, Junction to Case

RθJC

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

100

—

VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current

IDSS

—

µA

VDS = 80V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1.4

—

3.5

VDS = VGS, ID = 250 A

Static Drain-Source On-Resistance

RDS(ON)

—

10.7

Ω

VGS = 10V, ID = 20A

—

13.1

VGS = 6V, ID = 20A

—

18.2

VGS = 4.5V, ID = 5A

Diode Forward Voltage

VSD

—

1.3

VGS = 0V, IS = 20A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

1,871

—

VDS = 50V, VGS = 0V

f = 1MHz

Output Capacitance

Coss

—

261

—

Reverse Transfer Capacitance

Crss

—

6.9

—

Gate Resistance

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

—

33.3

—



VDD = 50V, ID = 10A,

VGS = 10V

Gate-Source Charge

QGS

—

6.9

—

Gate-Drain Charge

QGD

—

5.1

—

Turn-On Delay Time

tD(ON)

—

6.5

—

VDD = 50V, VGS = 10V,

ID = 10A, RG = 6Ω

Turn-On Rise Time

—

7.0

—

Turn-Off Delay Time

tD(OFF)

—

19.7

—

Turn-Off Fall Time

—

8.1

—

Reverse Recovery Time

tRR

—

37.9

—

IF = 10A, di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

51.9

—

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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