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MCS2010 数据表(PDF) 2 Page - Micro Commercial Components

部件名 MCS2010
功能描述  Dual N-Channel MOSFET
PDF  4 Pages
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制造商  MCC [Micro Commercial Components]
网页  http://www.mccsemi.com
标志 MCC - Micro Commercial Components

MCS2010 数据表(HTML) 2 Page - Micro Commercial Components

  MCS2010 Datasheet HTML 1Page - Micro Commercial Components MCS2010 Datasheet HTML 2Page - Micro Commercial Components MCS2010 Datasheet HTML 3Page - Micro Commercial Components MCS2010 Datasheet HTML 4Page - Micro Commercial Components  
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Revision:
A
20
16/02/03
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Micro Commercial Components
M C C
R
www.mccsemi.com
2 of 4
Notes :
1.Repetitive rating:Pluse width limited by maximum junction temperature
2.Surface mounted on FR4 board,t≤10 sec.
3.. Pulse test : Pulse width≤300μs, duty cycle≤2%.
4. Guaranteed by design, not subject to production.
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
20
V
Zero gate voltage drain current
IDSS
VDS =20V,VGS = 0V
11
uA
Gate-body leakage current
IGSS
VGS =±10V, VDS = 0V
uA
±10
Gate threshold voltage (note 3)
GS(th)
V
VDS =VGS, ID =250µA
0.3
1
V
Drain-source on-resistance(note 3)
DS(o
R
n)
VGS =4.5V, ID =10A
5.5
9.5
mΩ
VGS =4V, ID =10A
5.8
10
mΩ
VGS =3.5V, ID =9A
9
10.5
mΩ
VGS =3.1V, ID =9A
9A
3
11.5
mΩ
VGS =2.5V, ID =8A
8A
8
13
mΩ
Forward tranconductance(note 3)
FS
g
VDS =5V, ID =10A
65
S
Diode forward voltage (note 3)
SD
V
S=1
I
A, VGS = 0V
1
V
DYNAMIC PARAMETERS (note 4)
Input Capacitance
Ciss
VDS =10V,VGS =0V,f =1MHz
1000
1510
pF
Output Capacitance
Coss
150
290
pF
Reverse Transfer Capacitance
Crss
100
235
pF
SWITCHING PARAMETERS (note 4)
Turn-on delay time
td(on)
VGS=4.5V,VDS=10V,
RGEN=3Ω,RL=1Ω
1.1
ns
Turn-on rise time
tr
2.6
ns
Turn-off delay time
td(off)
7
ns
Turn-off fall time
tf
7.4
ns
Total Gate Charge
Qg
VDS=10V,VGS=4.5V
ID=10A
10
15
nC
Gate-Source Chage
Qgs
5.5
nC
Gage-Drain Charge
Qgd
6.5
nC



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