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STP601D 数据表(PDF) 3 Page - Stanson Technology

部件名 STP601D
功能描述  P Channel Enhancement Mode MOSFET
PDF  7 Pages
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制造商  STANSON [Stanson Technology]
网页  http://www.stansontech.com
标志 STANSON - Stanson Technology

STP601D 数据表(HTML) 3 Page - Stanson Technology

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STP601D
P Channel Enhancement Mode MOSFET
-
30A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP601D 2009. V1
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max
Uni
t
Static
Drain-Source
Breakdown Voltage
V(BR)DSS
VGS=0V,ID=-250uA
-60
V
Gate Threshold
Voltage
VGS(th)
VDS=VGS,ID=-250uA
-1.0
-2.5
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
nA
Zero Gate Voltage
Drain Current
IDSS
VDS=-60V,VGS=0V
-1
uA
VDS=-60V,VGS=0V
TJ=55℃
-5
Drain-source On-
Resistance
RDS(on)
VGS=-10V,ID=-20A
VGS=-4.5V,ID=-20A
22
28
30
35
mΩ
Forward
Transconductance
gfs
VDS=-50V,ID=-7.8A
32
S
Diode Forward Voltage
VSD
IS=-1.0A,VGS=0V
-1
V
Dynamic
Total Gate Charge
Qg
VDS=-30V,VGS=-10V
ID=-20A
45
58
nC
Gate-Source Charge
Qgs
23
Gate-Drain Charge
Qgd
10
Input Capacitance
Ciss
VDS =-30V,VGS=0V
F=1MHz
3000 3600
pF
Output Capacitance
Coss
240
Reverse
TransferCapacitance
Crss
153
Turn-On Time
td(on)
tr
VGS=-10V,VDS=-30V
RD=3Ω,RG=1.5Ω
12
nS
15
Turn-Off Time
td(off)
tf
38
15



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