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HTDF20M 数据表(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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HTDF20M 数据表(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 4 page ![]() Silicon Bridge Rectifiers HTDF20J- HTDF20M TDF719AA www.gmesemi.com Rev.B Production specification Features Glass passivated junction High surge current capability Saves space on printed circuit boards High temperature soldering guaranteed: 260°C/10 seconds RoHS Compliant Mechanical Data Case: TDF molded plastic Molding compound, UL flammability classification rating 94V-0 Terminals: Solder plated, solderable per MIL- STD-202,Method 208 Polarity: As marked on body Maximum Ratings (@TA = 25°C unless otherwise specified) Characteristic Symbol HTDF20J HTDF20K HTDF20M Units Peak repetitive reverse voltage VRRM 600 800 1000 V RMS reverse voltage VRMS 420 560 700 V DC blocking voltage VDC 600 800 1000 V Maximum average forward output current IF(AV) 2.0 A Peak forward surge current, 8.3ms single half-sine-wave @TJ= 25°C IFSM 50 A Thermal Characteristics Note: 1. Device mounted on PCB with 10 mm x 20 mm x 0.1mm copper pad areas Parameter Symbol HTDF20J HTDF20K HTDF20M Units Typical thermal resistance per leg (Note 1) R ΘJA R ΘJC 50 °C /W 10 Operating junction temperature range TJ - 55 ---- + 150 °C Storage temperature range TSTG - 55 ---- + 150 °C |
类似零件编号 - HTDF20M |
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类似说明 - HTDF20M |
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