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SFH229 数据表(PDF) 2 Page - OSRAM GmbH |
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SFH229 数据表(HTML) 2 Page - OSRAM GmbH |
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2 / 9 page ![]() 2015-12-23 2 Version 1.3 SFH 229 Maximum Ratings (TA = 25 °C) Characteristics (T A = 25 °C) Parameter Symbol Values Unit Operating and storage temperature range T op; Tstg -40 ... 100 °C Reverse voltage V R 20 V Total Power dissipation P tot 150 mW ESD withstand voltage (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) V ESD 2000 V Parameter Symbol Values Unit Photocurrent (Ev = 1000 lx, Std. Light A, VR = 5 V, T = 2856 K) (typ (min)) IP 28 (≥ 18) µA Wavelength of max. sensitivity (typ) λS max 860 nm Spectral range of sensitivity (typ) λ10% (typ) 380 ... 1100 nm Radiant sensitive area (typ) A 0.31 mm2 Dimensions of radiant sensitive area (typ) L x W 0.56 x 0.56 mm x mm Half angle (typ) ϕ ± 17 ° Dark current (VR = 10 V) (typ (max)) IR 0.05 (≤ 5) nA Spectral sensitivity of the chip (λ = 850 nm) (typ) Sλ typ 0.62 A / W Quantum yield of the chip (λ = 850 nm) (typ) η 0.90 Electro ns /Photon Open-circuit voltage (Ev = 1000 lx, Std. Light A) (typ (min)) VO 450 (≥ 400) mV Short-circuit current (E v = 1000 lx, Std. Light A) (typ) ISC 27 µA Rise and fall time (V R = 10 V, RL = 50 Ω, λ = 850 nm) (typ) t r, tf 0.01 µs Forward voltage (IF = 100 mA, E = 0) (typ) V F 1.3 V Capacitance (VR = 0 V, f = 1 MHz, E = 0) (typ) C0 13 pF Temperature coefficient of VO (typ) TCV -2.6 mV / K |
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