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MCP6S21 数据表(PDF) 2 Page - Microchip Technology |
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MCP6S21 数据表(HTML) 2 Page - Microchip Technology |
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2 / 43 page ![]() MCP6S21/2/6/8 DS21117A-page 2 2003 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † VDD - VSS .........................................................................7.0V All inputs and outputs....................... VSS - 0.3V to VDD +0.3V Difference Input voltage ........................................ |VDD - VSS| Output Short Circuit Current...................................continuous Current at Input Pin .............................................................±2mA Current at Output and Supply Pins ................................ ±30 mA Storage temperature .....................................-65°C to +150°C Junction temperature .................................................. +150°C ESD protection on all pins (HBM;MM) .................. ≥ 2 kV; 200V † Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. PIN FUNCTION TABLE Name Function VOUT Analog Output CH0-CH7 Analog Inputs VSS Negative Power Supply VDD Positive Power Supply SCK SPI Clock Input SI SPI Serial Data Input SO SPI Serial Data Output CS SPI Chip Select VREF External Reference Pin DC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, TA =+25°C, VDD = +2.5V to +5.5V, VSS = GND, VREF = VSS, G = +1 V/V, Input = CH0 = (0.3V)/G, CH1 to CH7 = 0.3V, RL =10 kΩ to VDD/2, SI and SCK are tied low and CS is tied high. Parameters Sym Min Typ Max Units Conditions Amplifier Input Input Offset Voltage VOS -275 — +275 µV G = +1, VDD = 4.0V Input Offset Voltage Drift ∆VOS/∆TA —±4 — µV/°C TA = -40 to +85°C Power Supply Rejection Ratio PSRR 70 85 — dB G = +1 (Note 1) Input Bias Current IB — ±1 — pA CHx = VDD/2 Input Bias Current over Temperature IB — — 250 pA TA = -40 to +85°C, CHx = VDD/2 Input Impedance ZIN —1013||15 — Ω||pF Input Voltage Range VIVR VSS−0.3 — VDD+0.3 V Amplifier Gain Nominal Gains G — 1 to 32 — V/V +1, +2, +4, +5, +8, +10, +16 or +32 DC Gain Error G = +1 gE -0.1 — +0.1 % VOUT ≈ 0.3V to VDD − 0.3V G ≥ +2 gE -1.0 — +1.0 % VOUT ≈ 0.3V to VDD − 0.3V DC Gain Drift G = +1 ∆G/∆TA — ±0.0002 — %/°C TA = -40 to +85°C G ≥ +2 ∆G/∆TA — ±0.0004 — %/°C TA = -40 to +85°C Internal Resistance RLAD 3.4 4.9 6.4 k Ω (Note 1) Internal Resistance over Temperature ∆RLAD/∆TA —+0.028 — %/°C (Note 1) TA = -40 to +85°C Amplifier Output DC Output Non-linearity G = +1 VONL — ±0.003 — % of FSR VOUT = 0.3V to VDD − 0.3V, VDD = 5.0V G ≥ +2 VONL — ±0.001 — % of FSR VOUT = 0.3V to VDD − 0.3V, VDD = 5.0V Maximum Output Voltage Swing VOH, VOL VSS+20 — VDD-100 mV G ≥ +2; 0.5V output overdrive VSS+60 — VDD-60 G ≥ +2; 0.5V output overdrive, VREF = VDD/2 Short-Circuit Current IO(SC) —±30 — mA Note 1: RLAD (RF + RG in Figure 4-1) connects VREF, VOUT and the inverting input of the internal amplifier. The MCP6S22 has VREF tied internally to VSS, so VSS is coupled to the internal amplifier and the PSRR spec describes PSRR+ only. We recommend the MCP6S22’s VSS pin be tied directly to ground to avoid noise problems. 2: IQ includes current in RLAD (typically 60 µA at VOUT = 0.3V). Both IQ and IQ_SHDN exclude digital switching currents. 3: The output goes Hi-Z and the registers reset to their defaults; see Section 5.4, “Power-On Reset”. |
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