BC856AS

Document number: DS30834 Rev. 9 - 2

2 of 6

www.diodes.com

September 2017

© Diodes Incorporated

BC856AS

© Diodes Incorporated

BC856AS

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

-80

V

Collector-Emitter Voltage

-65

V

Emitter-Base Voltage

-5.0

V

Collector Current

-100

mA

Peak Collector Current

-200

mA

Peak Emitter Current

-200

mA

Power Dissipation

(Note 5)

200

mW

Thermal Resistance, Junction to Ambient

(Note 5)

625

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

200

mW

Thermal Resistance, Junction to Ambient Air (Note 5)

625

C/W

Operating and Storage Temperature Range

-55 to +150

C

Characteristic (Note 6)

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

-80

—

—

V

Collector-Emitter Breakdown Voltage

-65

—

—

V

Emitter-Base Breakdown Voltage

-5

—

—

V

DC Current Gain

125

180

250

—

Collector-Emitter Saturation Voltage

—

-75

-250

-300

-650

mV

Base-Emitter Saturation Voltage

—

—

-700

-850

—

mV

Base-Emitter Voltage

-600

—

-650

—

-750

-820

mV

Collector-Cutoff Current

—

—

—

—

—

—

-15

-15

-4.0

nA

nA

µA

Gain Bandwidth Product

100

—

—

MHz

f = 100MHz

Collector-Base Capacitance

—

3

—

pF

Notes:

5. For the device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device

is measured when operating in a steady-state condition.

6. Short duration pulse test used to minimize self-heating effect.

.